KFG5616D1M-PEB00 datasheet, PDF

KFG5616D1M-PEB00: DescriptionFlash, 16MX16, 76ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, LEAD FREE, TSOP1-48; Categorystorage storage; File Size1MB，93 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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KFG5616D1M-PEB00 Overview

Flash, 16MX16, 76ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, LEAD FREE, TSOP1-48

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	SAMSUNG
Parts packaging code	TSOP1
package instruction	TSOP1,
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	76 ns
Other features	SYNCHRONOUS BURST OPERATION IS POSSIBLE
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	268435456 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-30 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	2.9 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	2.65 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	12 mm

OneNAND256

FLASH MEMORY

OneNAND SPECIFICATION

Product

OneNAND256

Part No.

KFG5616Q1M-DEB

KFG5616D1M-DEB

KFG5616U1M-DIB

(core & IO)

1.8V(1.7V~1.95V)

2.65V(2.4V~2.9V)

3.3V(2.7V~3.6V)

Temperature

Extended

Industrial

PKG

63FBGA(LF)/48TSOP1

Version: Ver. 1.2

Date: June 15th, 2005

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