SPC6605
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6605 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
20V/3.6A,R
DS(ON)
=97mΩ@V
GS
=4.5V
20V/3.1A,R
DS(ON)
=113mΩ@V
GS
=2.5V
P-Channel
-20V/-2.4A,R
DS(ON)
= 128mΩ@V
GS
=-4.5V
-20V/-2.0A,R
DS(ON)
=188mΩ@V
GS
=-2.5V
Super high density cell design for extremely low
RDS (ON)
TSOP– 6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
2011/8/1
Preliminary
Page 1
SPC6605
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
G1
S2
G2
D2
S1
D1
Description
Gate 1
Source 2
Gate 2
Drain 2
Source 1
Drain1
ORDERING INFORMATION
Part Number
SPC6605ST6RG
SPC6605ST6RGB
Package
TSOP- 6P
TSOP- 6P
Part
Marking
05YW
05YW
※
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※
SPC6605ST6RG : Tape Reel ; Pb – Free
※
SPC6605ST6RGB : Tape Reel ; Pb – Free ; Halogen -Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Typical
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
≤
10sec
Steady State
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
N-Channel
V
DSS
V
GSS
20
±12
3.2
2.6
10
1.6
1.15
0.75
-55/150
-55/150
50
90
52
95
P-Channel
-20
±12
-2.4
-1.8
-8
-1.4
V
V
A
A
A
W
℃
℃
℃
/W
Unit
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
2011/8/1
Preliminary
Page 2
SPC6605
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Conditions
V
GS
=0V,I
D
= 250uA
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±12V
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
V
DS
= 20V,V
GS
=0V T
J
=55℃
V
DS
=-20V,V
GS
=0V T
J
=55℃
V
DS
≥
4.5V,V
GS
= 4.5V
V
DS
≤
-4.5V,V
GS
=-4.5V
V
GS
=4.5V,I
D
=3.6A
V
GS
=-4.5V,I
D
=-2.4A
V
GS
=2.5V,I
D
=3.1A
V
GS
=-2.5V,I
D
=-2.0A
V
DS
=5V,I
D
=-3.4A
V
DS
=-5V,I
D
=-2.4A
I
S
=1.6A,V
GS
=0V
I
S
=-1.6A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
-20
0.45
-0.45
Typ
Max. Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.2
-1.2
±100
±100
1
-1
10
-10
0.085
0.115
0.100
0.165
10
6.5
0.85
-0.8
4.4
7.5
0.6
1
1.9
3
145
7.5
100
550
50
55
5.2
8.5
37
18
15
22
5.7
10
0.097
0.128
0.113
0.188
1.2
-1.2
V
nA
uA
A
Ω
S
V
6
-6
Drain-Source On-Resistance R
DS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
t
d(on)
gfs
V
SD
N-Channel
V
DS
=10V,V
GS
=4.5V, I
D
=3.6A
P-Channel
V
DS
=-16V,V
GS
=-4.5V ,I
D
=-2.A
nC
N-Channel
V
DS
=10V,V
GS
=0V, f=1.0MHz
P-Channel
V
DS
=-20V,V
GS
=0V,f=1.0MHz
pF
N-Channel
V
DD
=10V,R
L
=2.8Ω ,I
D
=3.6A
V
GEN
=4.5V ,R
G
=6Ω
P-Channel
V
DD
=-10V,R
L
=10Ω ,I
D
=-1.0A
V
GEN
=-4.5V ,R
G
=3.3Ω
nS
2011/8/1
Preliminary
Page 3
Talking
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