APT1004R2BN-GULLWING datasheet, PDF

APT1004R2BN-GULLWING: Description4A, 1000V, 4.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size169KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT1004R2BN-GULLWING Overview

4A, 1000V, 4.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

Parameter Name	Attribute value
Maker	Microsemi
Parts packaging code	TO-247
package instruction	FLANGE MOUNT, R-PSFM-G3
Contacts	3
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	4.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	60 pF
JESD-30 code	R-PSFM-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	180 W
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	77 ns
Maximum opening time (tons)	43 ns

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