BUK9Y12-55B datasheet, PDF - EEWORLD Datasheet

BUK9Y12-55B: DescriptionPower Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size308KB，15 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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BUK9Y12-55B Overview

Power Field-Effect Transistor

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code	not_compliant
Avalanche Energy Efficiency Rating (Eas)	129 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	61.8 A
Maximum drain-source on-resistance	0.013 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235
JESD-30 code	R-PSSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	247 A
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	BUK9Y12-55B	934063309115
Description	Power Field-Effect Transistor	Power Field-Effect Transistor
Is it Rohs certified?	conform to	conform to
Maker	Nexperia	Nexperia
package instruction	SMALL OUTLINE, R-PSSO-G4	SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code	not_compliant	not_compliant
Avalanche Energy Efficiency Rating (Eas)	129 mJ	129 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V
Maximum drain current (ID)	61.8 A	61.8 A
Maximum drain-source on-resistance	0.013 Ω	0.013 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235	MO-235
JESD-30 code	R-PSSO-G4	R-PSSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	247 A	247 A
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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