NAND512W3A1AZB6F datasheet, PDF

NAND512W3A1AZB6F: DescriptionFlash, 64MX8, 10000ns, PBGA55, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-55; Categorystorage storage; File Size883KB，56 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com; Environmental Compliance

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NAND512W3A1AZB6F Overview

Flash, 64MX8, 10000ns, PBGA55, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-55

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	55
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	10000 ns
JESD-30 code	R-PBGA-B55
length	10 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	55
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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