GAL16V8/883
High Performance E
2
CMOS PLD
Generic Array Logic™
Features
• HIGH PERFORMANCE E
2
CMOS
®
TECHNOLOGY
— 7.5 ns Maximum Propagation Delay
— Fmax = 100 MHz
— 6 ns Maximum from Clock Input to Data Output
— TTL Compatible 12 mA Outputs
— UltraMOS
®
Advanced CMOS Technology
• 50% REDUCTION IN POWER FROM BIPOLAR
— 75mA Typ Icc
• ACTIVE PULL-UPS ON ALL PINS (GAL16V8D-7 and
GAL16V8D-10)
• E CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
— Also Emulates 20-pin PAL
®
Devices with Full Function/
Fuse Map/Parametric Compatibility
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
I
8
I
OLMC
OE
Functional Block Diagram
I/CLK
CLK
8
I
8
I
OLMC
I/O/Q
OLMC
I/O/Q
Devices have been discontinued.
PROGRAMMABLE
AND-ARRAY
(64 X 32)
8
OLMC
I/O/Q
2
I
8
OLMC
I/O/Q
I
8
OLMC
I/O/Q
I
8
OLMC
I/O/Q
I
8
OLMC
I/O/Q
I/O/Q
I/OE
Description
The GAL16V8/883 is a high performance E
2
CMOS program-
mable logic device processed in full compliance to MIL-STD-883.
This military grade device combines a high performance CMOS
process with Electrically Erasable (E
2
) floating gate technology to
provide the highest speed/power performance available in the
883 qualified PLD market. The GAL16V8D/883, at 7.5ns maxi-
mum propagation delay time, is the world's fastest military quali-
fied CMOS PLD.
The generic GAL architecture provides maximum design flexibil-
ity by allowing the Output Logic Macrocell (OLMC) to be config-
ured by the user. The GAL16V8/883 is capable of emulating all
standard 20-pin PAL
®
devices with full function/fuse map/para-
metric compatibility.
Unique test circuitry and reprogrammable cells allow complete
AC, DC, and functional testing during manufacture. Therefore,
Lattice Semiconductor delivers 100% field programmability and
functionality of all GAL products. In addition, 100 erase/write
cycles and data retention in excess of 20 years are specified.
Pin Configuration
CERDIP
LCC
I/CLK
I
I
3
I
I
I
I
I
8
6
4
I
2
I/CLK Vcc
20
I/O/Q
19
18
I/O/Q
I/O/Q
1
20
Vcc
I/O/Q
I/O/Q
I
I
I
I
I
I
I
GND
10
11
5
GAL
16V8
15
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE
GAL16V8
Top View
9
I
GND
11
I/OE I/O/Q
13
16
I/O/Q
I/O/Q
14
I/O/Q
I/O/Q
Copyright © 2010 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
April 2010
16v8mil_04
1
Specifications
GAL16V8D-7/10/883
Absolute Maximum Ratings
(1)
Supply voltage V
CC
...................................... –0.5 to +7V
Input voltage applied .......................... –2.5 to V
CC
+1.0V
Off-state output voltage applied ......... –2.5 to V
CC
+1.0V
Storage Temperature ................................ –65 to 150°C
Case Temperature with
Power Applied ........................................ –55 to 125°C
1.Stresses above those listed under the “Absolute Maximum Rat-
ings” may cause permanent damage to the device. These are
stress only ratings and functional operation of the device at these
or at any other conditions above those indicated in the operational
sections of this specification is not implied (while programming,
follow the programming specifications).
Recommended Operating Conditions
Case Temperature (T
C
) .............................. –55 to 125°C
Supply voltage (V
CC
)
with Respect to Ground ..................... +4.50 to +5.50V
Devices have been discontinued.
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
SYMBOL
PARAMETER
Input Low Voltage
Input High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
Output Low Voltage
Output High Voltage
Low Level Output Current
High Level Output Current
Output Short Circuit Current
Operating Power
Supply Current
CONDITION
MIN.
Vss – 0.5
TYP.
3
—
—
—
—
—
—
—
—
—
75
MAX.
0.8
Vcc+1
UNITS
V
V
μA
μA
V
V
mA
mA
mA
mA
V
IL
V
IH
I
IL
1
I
IH
V
OL
V
OH
I
OL
I
OH
I
OS
2
I
CC
2.0
0V
≤
V
IN
≤
V
IL
(MAX.)
3.5V
≤
V
IN
≤
V
CC
I
OL
= MAX.
Vin
=
V
IL
or
V
IH
I
OH
= MAX.
Vin
=
V
IL
or
V
IH
—
—
—
2.4
—
—
V
CC
= 5V
V
OUT
= 0.5V T
A
= 25°C
L-7/-10
–30
—
–
100
10
0.5
—
12
–2
–150
130
V
IL
= 0.5V
V
IH
= 3.0V
f
toggle
= 15MHz Outputs Open
1) The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information.
2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) Typical values are at Vcc = 5V and T
A
= 25
°C
2
Specifications
GAL16V8D-7/10/883
AC Switching Characteristics
Over Recommended Operating Conditions
PARAMETER
TEST
COND
1
.
A
A
—
—
—
A
DESCRIPTION
Input or I/O to Combinational Output
Clock to Output Delay
Clock to Feedback Delay
Setup Time, Input or Feedback before Clock↑
Hold Time, Input or Feedback after Clock↑
Maximum Clock Frequency with
External Feedback, 1/(tsu + tco)
Maximum Clock Frequency with
Internal Feedback, 1/(tsu + tcf)
Maximum Clock Frequency with
No Feedback
Clock Pulse Duration, High
Clock Pulse Duration, Low
Input or I/O to Output Enabled
OE to Output Enabled
Input or I/O to Output Disabled
OE to Output Disabled
1
1
—
7
0
76.9
-7
MIN. MAX.
7.5
6
6
—
—
—
2
1
—
10
0
58.8
-10
MIN. MAX.
10
7
7
—
—
—
UNITS
ns
ns
t
pd
t
co
t
cf
2
t
su
t
h
Devices have been discontinued.
ns
ns
ns
MHz
f
max
3
A
A
76.9
100
—
—
58.8
62.5
—
—
MHz
MHz
t
wh
t
wl
t
en
t
dis
—
—
B
B
C
C
5
5
1
1
1
1
—
—
9
7
9
7
8
8
—
—
—
—
—
—
10
10
10
10
ns
ns
ns
ns
ns
ns
1) Refer to
Switching Test Conditions
section.
2) Calculated from
fmax
with internal feedback. Refer to
fmax Descriptions
section.
3) Refer to
fmax Descriptions
section.
Capacitance (T
A
= 25
°
C, f = 1.0 MHz)
SYMBOL
C
I
C
I/O
PARAMETER
Input Capacitance
I/O Capacitance
MAXIMUM*
10
10
UNITS
pF
pF
TEST CONDITIONS
V
CC
= 5.0V, V
I
= 2.0V
V
CC
= 5.0V, V
I/O
= 2.0V
*Characterized but not 100% tested.
3
Specifications
GAL16V8D/883
Absolute Maximum Ratings
(1)
Supply voltage V
CC
...................................... –0.5 to +7V
Input voltage applied .......................... –2.5 to V
CC
+1.0V
Off-state output voltage applied ......... –2.5 to V
CC
+1.0V
Storage Temperature ................................ –65 to 150°C
Case Temperature with
Power Applied ........................................ –55 to 125°C
1.Stresses above those listed under the “Absolute Maximum Rat-
ings” may cause permanent damage to the device. These are
stress only ratings and functional operation of the device at these
or at any other conditions above those indicated in the operational
sections of this specification is not implied (while programming,
follow the programming specifications).
Recommended Operating Conditions
Case Temperature (T
C
) .............................. –55 to 125°C
Supply voltage (V
CC
)
with Respect to Ground ..................... +4.50 to +5.50V
Devices have been discontinued.
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
SYMBOL
PARAMETER
Input Low Voltage
Input High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
Output Low Voltage
Output High Voltage
Low Level Output Current
High Level Output Current
Output Short Circuit Current
Operating Power
Supply Current
V
CC
= 5V
V
OUT
= 0.5V T
A
= 25°C
L -15/ -20/-30
0V
≤
V
IN
≤
V
IL
(MAX.)
3.5V
≤
V
IN
≤
V
CC
I
OL
= MAX.
Vin
=
V
IL
or
V
IH
I
OH
= MAX.
Vin
=
V
IL
or
V
IH
CONDITION
MIN.
Vss – 0.5
TYP.
2
—
—
—
—
—
—
—
—
—
75
MAX.
0.8
Vcc+1
UNITS
V
V
μA
μA
V
V
mA
mA
mA
mA
V
IL
V
IH
I
IL
I
IH
V
OL
V
OH
I
OL
I
OH
I
OS
1
I
CC
2.0
—
—
—
2.4
—
—
–30
—
–
10
10
0.5
—
12
–2
–150
130
V
IL
= 0.5V
V
IH
= 3.0V
f
toggle
= 15MHz Outputs Open
1) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) Typical values are at Vcc = 5V and T
A
= 25
°C
4
Specifications
GAL16V8D/883
AC Switching Characteristics
Over Recommended Operating Conditions
TEST DESCRIPTION
COND
1
.
A
A
—
—
—
A
Input or I/O to Combinational Output
Clock to Output Delay
Clock to Feedback Delay
Setup Time, Input or Feedback before Clock↑
Hold Time, Input or Feedback after Clock↑
Maximum Clock Frequency with
External Feedback, 1/(tsu + tco)
Maximum Clock Frequency with
Internal Feedback, 1/(tsu + tcf)
Maximum Clock Frequency with
No Feedback
Clock Pulse Duration, High
Clock Pulse Duration, Low
Input or I/O to Output Enabled
OE to Output Enabled
Input or I/O to Output Disabled
OE to Output Disabled
-15
-20
-30
PARAMETER
MIN. MAX. MIN. MAX. MIN. MAX.
3
2
—
12
0
41.6
15
12
12
—
—
—
3
2
—
15
0
33.3
20
15
15
—
—
—
3
2
—
25
0
22.2
30
20
20
—
—
—
UNITS
ns
ns
ns
ns
ns
MHz
t
pd
t
co
t
cf
2
t
su
t
h
Devices have been discontinued.
f
max
3
A
A
41.6
50
—
—
33.3
41.6
—
—
22.2
33.3
—
—
MHz
MHz
t
wh
t
wl
t
en
t
dis
—
—
B
B
C
C
10
10
—
—
—
—
—
—
15
15
15
15
12
12
—
—
—
—
—
—
20
18
20
18
15
15
—
—
—
—
—
—
30
25
30
25
ns
ns
ns
ns
ns
ns
1) Refer to
Switching Test Conditions
section.
2) Calculated from
fmax
with internal feedback. Refer to
fmax Descriptions
section.
3) Refer to
fmax Descriptions
section.
Capacitance (T
A
= 25
°
C, f = 1.0 MHz)
SYMBOL
C
I
C
I/O
PARAMETER
Input Capacitance
I/O Capacitance
MAXIMUM*
10
10
UNITS
pF
pF
TEST CONDITIONS
V
CC
= 5.0V, V
I
= 2.0V
V
CC
= 5.0V, V
I/O
= 2.0V
*Characterized but not 100% tested.
5
京公网安备 11010802033920号
EEWORLD
