MIL-M-38510/4D
14 December 2004
SUPERSEDING
MIL-M-38510/4C
25 February 1977
MIL-M-0038510/4B(USAF)
15 October 1973
MILITARY SPECIFICATION
MICROCIRCUITS, DIGITAL, TTL, MULTIPLE NOR GATES, MONOLITHIC SILICON
Inactive for new design after 7 September 1995.
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic, silicon, TTL, positive NOR logic gating
microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each
type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been
superseded by MIL-PRF-38535, (see 6.3).
1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein.
1.2.1 Device types. The device types are as follows:
Device type
01
02
03
04
Circuit
Quadruple 2-input positive NOR gate
Dual 4-input positive NOR gate with strobe and expandable input
Dual 4-input positive NOR gate with strobe
Triple 3-input positive NOR gate
1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.
1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:
Outline letter
A
B
C
D
E
F
Descriptive designator
GDFP5-F14 or CDFP6-F14
GDFP4-14
GDIP1-T14 or CDIP2-T14
GDFP1-F14 or CDFP2-F14
GDIP1-T16 or CDIP2-T16
GDFP2-F16 or CDFP3-F16
Terminals
14
14
14
14
16
16
Package style
Flat pack
Flat pack
Dual-in-line
Flat pack
Dual-in-line
Flat-pack
Comments, suggestions, or questions on this document should be addressed to: Commander, Defense
Supply Center Columbus, ATTN: DSCC-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to
bipolar@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5962
MIL-M-38510/4D
1.2.4 Absolute maximum ratings.
Supply voltage range ......................................................
Input voltage range .........................................................
Storage temperature range ............................................
Maximum power dissipation per gate, P
D
......................
Lead temperature (soldering 10 seconds) ......................
Thermal resistance, junction-to-case (θ
JC
)......................
Junction temperature (T
J
)
2/
..........................................
1.2 Recommended operating conditions.
Supply voltage.................................................................
Minimum high level input voltage ...................................
Maximum low level input voltage ....................................
Normalized fanout (each output) ....................................
Case operating temperature range (T
C
) .........................
2.0 APPLICABLE DOCUMENT
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification.
This section does not include documents cited in other sections of this specification or recommended for
additional information or as examples. While every effort has been made to ensure the completeness of this
list, document users are cautioned that they must meet all specified requirements of documents cited in
sections 3, 4, or 5 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications and standards. The following specifications and standards form a part of this specification to
the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535 -
Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
4.5 V dc minimum to 5.5 V dc maximum
2.0 V dc
0.8 V dc
10 maximum
-55°C to 125°C
-0.5 V dc to +7.0 V dc
-1.5 V dc at -12 mA to +5.5 V dc
-65°C to +150°C
60 mW dc 1/
300°C
(See MIL-STD-1835)
175°C
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
-
-
Test Method Standard for Microelectronics.
Interface Standard Electronic Component Case Outlines
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
_______
1/ Must withstand the added P
D
due to short circuit condition (e.g. I
OS
) at one output for 5 seconds duration.
2/ Maximum junction temperature should not be exceeded except in accordance with allowable short
duration burn-in screening condition in accordance with MIL-PRF-38535.
2
MIL-M-38510/4D
3. REQUIREMENTS
3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.3 and 6.4).
3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as
specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the
QM plan shall not affect the form, fit, or function as described herein.
3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be
as specified in MIL-PRF-38535 and herein.
3.3.1 Logic diagram and terminal connections. The logic diagram and terminal connections shall be as specified
on figure 1.
3.3.2 Truth tables and logic equations. The truth tables and logic equations shall be as specified on figure 2.
3.3.3 Schematic circuit. The schematic circuit shall be maintained by the manufacturer and made available to the
qualifying activity and the preparing activity upon request.
3.3.4 Case outlines. Case outlines shall be as specified in 1.2.3.
3.4 Lead material and finish. Lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).
3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table 1
and apply over the full recommended case operating temperature range, unless otherwise specified.
3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups
specified in table II. The electrical tests for each subgroup are described in table III.
3.7 Marking. Marking shall be in accordance with MIL-PRF-38535.
3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group
number 1 (see MIL-PRF-38535, appendix A).
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535
or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall
not effect the form, fit, or function as described herein.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.
4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shall be conducted on all devices prior
to qualification and conformance inspection. The following additional criteria shall apply:
a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as
specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test
circuit shall be maintained under document control by the device manufacturer's Technology Review
Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or
preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power
dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical
parameters test prior to burn-in is optional at the discretion of the manufacturer.
c. Additional screening for space level product shall be as specified in MIL-PRF-38535.
3
MIL-M-38510/4D
TABLE I. Electrical performance characteristics.
Conditions
Test
High-level output voltage
Symbol
V
OH
-55°C
≤
T
C
≤
+125°C
unless otherwise specified
V
CC
= 4.5 V, V
IN
= 0.8 V,
I
OH
= -800
µA
V
CC
= 4.5 V, V
IN
= 0.8 V,
I
OH
= -400
µA
V
CC
= 4.5 V, V
IN
= 0.8 V mA,
I
OH
= -800
µA
V
CC
= 4.5 V, I
X
= 0.15 mA,
I
X
= 0.15 mA, I
OH
= -400
µA
1/
Low-level output voltage
V
OL
V
CC
= 4.5 V, I
OL
= 16 mA,
V
IN
= 2.0 V
V
CC
= 4.5 V, V
IN
= 2.0 V,
I
OL
= 16 mA
V
CC
= 4.5 V, I
X
= 0.3 mA,
R
X
= 138
Ω,
I
OL
= 16 mA
Expander current
Base-emitter voltage
High-level input current
I
X
V
BE
I
IH1
V
CC
= 5.0 V, I
OL
= 16 mA,
V
X
= 0.4V, T
C
= -55° C
V
CC
= 5.0 V, I
X
= 0.41 mA,
I
OL
= 16 mA, T
C
= -55° C
3/
02
4/
02
5/
All
02, 03
All
02, 03
6/
6/
7/
01
02, 03, 04
I
IL2
Short-circuit output
current
High-level supply
current per gate
I
OS
I
CCH
V
CC
= 5.5 V, Strobe input = 0.4 V
V
CC
= 5.5 V, V
IN
= 0 V
V
CC
= 5.5 V, V
IN
= 0 V
02, 03
All
01
02, 03
04
See footnotes at end of table.
-.55
-1.7
-2.8
-20
40
160
100
400
-1.6
-1.6
-6.4
-55
4
8
5.2
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
1.1
V
3.5
mA
2/
02
0.4
V
2/
01, 03
04
0.4
V
02
2.4
V
01
2.4
V
Device
type
03, 04
Limits
Min
2.4
Max
Unit
V
V
CC
= 5.5 V, Data input = 2.4 V
V
CC
= 5.5 V, Strobe input = 2.4 V
High-level input current
I
IH2
V
CC
= 5.5 V, Data input = 5.5 V
V
CC
= 5.5 V, Strobe input = 5.5 V
Low-level input current
I
IL1
V
CC
= 5.5 V, Data input = 0.4 V
4
MIL-M-38510/4D
TABLE I. Electrical performance characteristics - Continued.
Conditions
Test
Low-level supply
current per gate
Input clamp voltage
V
I C
V
CC
= 4.5 V, I
IN
= -12 mA,
T
C
= 25° C
C
L
= 50 pF minimum,
R
L
= 390
Ω
±5 percent
C
L
= 50 pF minimum,
R
L
= 390
Ω
±5 percent
01, 03, 04
02
3
3
27
30
ns
ns
Symbol
I
CCL
-55°C
≤
T
C
≤
+125°C
unless otherwise specified
V
CC
= 5.5 V, V
IN
= 5 V
Device
type
01
02, 03
04
All
All
3
Limits
6.5
9.5
8.5
-1.5
24
mA
mA
mA
V
ns
Propagation delay time t
PHL
high-to-low level
Propagation delay time t
PLH
low-to-high level
1/
2/
3/
4/
5/
6/
7/
See test figure 7.
All unspecified inputs grounded.
See test figure 6.
See test figure 9.
See test figure 8.
All unspecified inputs at 5.5 V.
Not more than one output should be shorted at a time.
5
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