PZTM1101/T3 datasheet, PDF - EEWORLD Datasheet

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PZTM1101/T3: DescriptionTRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size37KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PZTM1101/T3 Overview

TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

PZTM1101/T3 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

PZTM1101/T3 Preview

DISCRETE SEMICONDUCTORS

DATA SHEET

k, halfpage

M3D087

PZTM1101

NPN transistor/Schottky-diode

module

Product speciﬁcation

1996 May 09

Philips Semiconductors

Product speciﬁcation

NPN transistor/Schottky-diode module

FEATURES

•

Low output capacitance

•

Fast switching time

•

Integrated Schottky protection

diode.

handbook, halfpage

PZTM1101

DESCRIPTION

Combination of an NPN transistor and a Schottky barrier diode in a plastic

SOT223 package. PNP complement: PZTM1102.

APPLICATIONS

•

High-speed switching for industrial

applications.

PINNING

base

emitter

collector, cathode Schottky

DESCRIPTION

anode Schottky

Marking code:

TM1101.

Top view

MAM236

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

NPN transistor

CBO

CES

EBO

F(AV)

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

open emitter

= 0

open collector

−

reverse current applied

forward current applied

Combined device

tot

amb

stg

total power dissipation

operating ambient temperature

storage temperature

junction temperature

up to T

amb

= 25

°C

−

−55

−

1.2

+150

150

°C

−

200

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Schottky barrier diode

continuous reverse voltage

forward current (DC)

average forward current

junction temperature

125

150

°C

1996 May 09

Philips Semiconductors

Product speciﬁcation

NPN transistor/Schottky-diode module

ELECTRICAL CHARACTERISTICS

amb

= 25

°C

unless otherwise speciﬁed.

SYMBOL

NPN transistor

(BR)CBO

(BR)CES

(BR)EBO

CES

EBO

CEsat

collector-base breakdown voltage

open emitter; I

= 10

µA;

= 0;

amb

−55

to +150

°C;

note 1

−

300

100

PARAMETER

CONDITIONS

PZTM1101

MIN.

MAX.

−

100

200

300

250

350

850

950

1000

1100

−

300

−

500

−

310

100

UNIT

µA

MHz

collector-emitter breakdown voltage open base; I

= 1 mA; V

= 0;

amb

−55

to +150

°C;

note 1

emitter-base breakdown voltage

collector-emitter cut-off current

emitter-base cut-off current

collector-emitter saturation voltage

open collector; I

= 10

µA;

= 0;

amb

−55

to +150

°C;

note 1

= 20 V; V

= 0

= 6 V; I

= 0

= 6 V; I

= 0; T

amb

−55

to +150

°C

note 1

= 10 mA; I

= 1 mA

= 50 mA; I

= 3.2 mA

= 20 V; V

= 0; T

amb

−55

to +150

°C −

CEsat

collector-emitter saturation voltage

amb

−55

to +150

°C;

note 1

= 10 mA; I

= 1 mA

= 50 mA; I

= 3.2 mA

BEsat

base-emitter saturation voltage

note 1

= 10 mA; I

= 1 mA

= 50 mA; I

= 5 mA

BEsat

base-emitter saturation voltage

amb

−55

to +150

°C;

note 1

= 10 mA; I

= 1 mA

= 50 mA; I

= 5 mA

output capacitance

input capacitance

transition frequency

DC current gain

= i

= 0; V

= 5 V; f = 1 MHz

= i

= 0; V

= 0.5 V; f = 1 MHz

= 10 mA; V

= 20 V; f = 100 MHz

= 1 V; note 1

= 0.1 mA

= 1 mA

= 10 mA

= 100 mA

DC current gain

= 1 V; T

amb

−55

to +150

°C;

note 1

= 10 mA

= 100 mA

WITCHING TIMES

(see Figs 2 and 3)

delay time

rise time

storage time

fall time

= 5 V

= 50 mA

= 0 to 5 V

110

1996 May 09

Philips Semiconductors

Product speciﬁcation

NPN transistor/Schottky-diode module

PZTM1101

SYMBOL

PARAMETER

CONDITIONS

MIN.

−

MAX.

UNIT

Schottky barrier diode

forward voltage

= 100 mA; note 1

= 100 mA; T

amb

−55

to +150

°C;

note 1

= 1 A; note 1

= 1 A; T

amb

−55

to +150

°C;

note 1

reverse current

= 40 V; note 1

= 40 V; T

= 125

°C;

amb

−55

to +150

°C;

note 1

reverse current

= 10 V; note 1

= 10 V; T

= 125

°C;

amb

−55

to +150

°C;

note 1

Notes

1. Measured under pulsed conditions: t

≤

300

µs; δ ≤

0.01.

2. Limiting value for T

= 125

°C;

= 150

°C

with reverse current applied is not allowed as this may cause thermal

runaway leading to thermal destruction of the diode. A peak junction temperature of T

= 150

°C

is only allowed with

forward voltage applied.

THERMAL CHARACTERISTICS

SYMBOL

th j-a

Note

1. Refer to SOT223 standard mounting conditions.

PARAMETER

CONDITIONS

VALUE

100

UNIT

K/W

junction capacitance

= 0 V; f = 1 MHz

330

400

500

560

300

(2)

250

µA

thermal resistance from junction to ambient (combined device) note 1

1996 May 09

Philips Semiconductors

Product speciﬁcation

NPN transistor/Schottky-diode module

GRAPHICAL DATA

PZTM1101

handbook, halfpage

VCC = 5 V DC

Ω

(1%)

INPUT

OUTPUT

90%

ton

toff

10%

MBH221

825

Ω

(1%)

7.5 kΩ

(5%)

DUT

Vo (pin 4)

10%

90%

5.23

Ω

(1%)

MBH220

< 5 ns (10% to 90%); t

= 1

µs; δ

= 0.02; Z

= 50

Ω.

= t

+ t

; t

off

= t

+ t

Fig.2 Switching times test circuit.

Fig.3 Input and output waveforms.

1996 May 09

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PZTM1101/T3 Related Products

	PZTM1101/T3	PZTM1101T/R	PZTM1101,135	PZTM1101
Description	TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power	PZTM1101	TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power
Maker	NXP	NXP	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	30	30	30	30
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz	300 MHz

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