MD200S18M3 datasheet, PDF - EEWORLD Datasheet

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MD200S18M3: DescriptionGlass Passivated Three Phase Rectifier Bridge; File Size76KB，3 Pages; ManufacturerAPTSEMI; Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.

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Glass Passivated Three Phase Rectifier Bridge

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MD200S18M3

Glass Passivated Three

Phase Rectifier Bridge

RRM

800 to 1800V

200 Amp

Applications

Three phase rectifiers for power supplies

Rectifiers for DC motor field supplies

Battery charger rectifiers

Input rectifiers for variable frequency drives

Circuit

Module Type

TYPE

MD200S08M3

MD200S12M3

MD200S16M3

MD200S18M3

Features

Three phase bridge rectifier

Blocking voltage:800 to 1800V

Heat transfer through aluminum oxide DBC

ceramic isolated metal baseplate

Glass passivated chip

UL recognized applied for file no. E360040

RRM

800V

1200V

1600V

1800V

RSM

900V

1300V

1700V

1900V

Maximum Ratings

Symbol

FSM

Visol

Tvj

Tstg

Weight

Conditions

Three phase, full wave

Tc=100℃

t=10mS Tvj =45℃

a.c.50HZ;r.m.s.;1min

Values

200

2240

25000

3000

-40 to +150

-40 to +125

5±15%

230

Units

℃

To terminals(M6)

To heatsink(M6)

Module (Approximately)

Thermal Characteristics

Symbol

Rth(j-c)

Rth(c-s)

Per diode

Conditions

Values

0.45

0.025

Units

℃/W

Module (Approximately)

Electrical Characteristics

Symbol

T=25℃ I

=300A

=25℃ V

RRM

=150℃ V

RRM

Conditions

Values

Min.

－

Typ.

1.45

－

Max.

1.70

0.5

Units

Document Number: S-M0023

Rev.1.0, May.31, 2013

www.apt-semi.com

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