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SMAJ160A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size173KB,11 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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SMAJ160A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SMAJ160A Parametric

Parameter NameAttribute value
MakerLRC
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Maximum breakdown voltage197 V
Minimum breakdown voltage178 V
Breakdown voltage nominal value187.5 V
Maximum clamping voltage259 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Maximum repetitive peak reverse voltage160 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
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