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FT20C04-D55M

Description
Non-Volatile SRAM, 512X8, 55ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28
Categorystorage    storage   
ManufacturerForce Technologies Ltd.
Download Datasheet Parametric View All

FT20C04-D55M Overview

Non-Volatile SRAM, 512X8, 55ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28

FT20C04-D55M Parametric

Parameter NameAttribute value
MakerForce Technologies Ltd.
Parts packaging codeDIP
package instructionDIP,
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time55 ns
Other featuresMINIMUM 100 YEARS OF DATA RETENTION
JESD-30 codeR-CDIP-T28
JESD-609 codee0
memory density4096 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Number of functions1
Number of terminals28
word count512 words
character code512
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512X8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
512 x 8 nvSRAM
CMOS
Nonvolatile Static RAM
FEATURES
35ns, 45ns
and
55ns
Access Times
STORE
to Nonvolatile Elements Initiated by
Hardware
RECALL
to SRAM Initiated by Hardware or
Power Restore
• Automatic
STORE
Timing
• 10mA Typical I
CC
at 200ns Cycle Time
• Unlimited READ, WRITE and
RECALL
Cycles
• 1,000,000
STORE
Cycles to Nonvolatile Ele-
ments
• 100-Year Data Retention over Industrial
Temperature Range
• Industrial
& Military
Temperatures
FT20C04
DESCRIPTION
The
Force FT20C04
is a fast static
RAM
with a non-
volatile element incorporated in each static memory
cell. The
SRAM
can be read and written an unlimited
number of times, while independent nonvolatile data
resides in nonvolatile elements. Data may easily be
transferred from the
SRAM
to the Nonvolatile Elements
(the
STORE
operation), or from the Nonvolatile Ele-
ments to the
SRAM
(the
RECALL
operation), using the
NE pin. Transfers from the Nonvolatile Elements to the
SRAM
(the
RECALL
operation) also take place auto-
matically on restoration of power. The
FT20C04
combines the high performance and ease of use of a
fast
SRAM
with nonvolatile data integrity.
The
FT20C04
features industry-standard pinout for
nonvolatile
RAM
s in a 28-pin 600 mil plastic
DIP
.
BLOCK DIAGRAM
16 x 256
ROW DECODER
PIN CONFIGURATIONS
NE
NC
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
5
A
6
A
7
A
8
STORE
STATIC RAM
ARRAY
16 x 256
RECALL
V
CC
W
NC
A
8
NC
NC
G
NC
E
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
28 - 600 PDIP
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
INPUT BUFFERS
COLUMN I/O
COLUMN DEC
PIN NAMES
STORE/
RECALL
CONTROL
A
0
- A
8
W
DQ
0
- DQ
7
Address Inputs
Write Enable
Data In/Out
Chip Enable
Output Enable
Nonvolatile Enable
Power (+ 5V)
Ground
A
0
A
1
A
2
A
3
A
4
E
G
NE
E
W
G
NE
V
CC
V
SS

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