V23990-P589-*4*-PM
flow1
Features
●
3~rectifier, optional BRC, Inverter, NTC
●
Very compact housing, easy to route
●
IGBT4 / EmCon4 technology for low saturation losses
and improved EMC behaviour
12mm housing
Solder pins
17mm housing
Solder pins
17mm housing
Pressfit pins
1200V/25A
flow1 housing
Target Applications
Schematic
●
Industrial drives
●
Embedded Drives
Types
●
V23990-P589-A41-PM
●
V23990-P589-A41Y-PM
●
V23990-P589-A418-PM
●
V23990-P589-C41-PM
Maximum Ratings
C,
T
j
=25° unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
It
P
tot
T
j
max
2
1600
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
33
47
250
C
T
j
=150°
310
C
T
h
=80°
T
c
=80°
C
37
60
150
V
A
A
A
2
s
W
°
C
t
p
=10ms
half sine wave
T
j
=T
j
max
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
1200V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
27
34
75
50
73
111
±20
10
800
175
V
A
A
A
W
V
µs
V
°
C
copyright Vincotech
1
Revision: 2
V23990-P589-*4*-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
C
T
h
=80°
C
T
c
=80°
T
h
=80°
C
C
T
c
=80°
1200
25
32
50
52
79
175
V
A
A
W
°
C
Brake Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
1200V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
18
22
45
50
53
80
±20
10
800
175
V
A
A
A
W
V
µs
V
°
C
Brake Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
14
19
20
29
44
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
2
Revision: 2
V23990-P589-*4*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
= 1 W/mK
1500
30
30
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=150°
C
0,8
1,16
1,13
0,90
0,78
8,00
11,00
1,6
V
V
m
2
mA
Thermal resistance chip to heatsink per chip
R
thJH
1,89
K/W
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=32
Rgon=32
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
1200
0
0,00085
25
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5,2
1,9
5,8
1,94
2,40
6,4
2,4
0,0024
120
V
V
mA
nA
-
126
126
21
28
220
284
74
100
1,64
2,53
1,38
2,17
ns
±15
600
25
mWs
1430
115
85
200
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,30
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
25
Rgon=32
±15
600
25
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,3
1,97
1,94
32
34
265
436
2,50
4,81
1722
580
0,98
1,94
2,2
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,83
K/W
copyright Vincotech
3
Revision: 2
V23990-P589-*4*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Brake Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
15
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=32
Rgon=32
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
1200
0
0,00085
15
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1,6
5,8
1,88
2,30
6,5
2,2
0,005
200
V
V
mA
nA
-
87
88
24
29
194
258
77
111
0,950
1,381
0,824
1,273
ns
±15
600
15
mWs
900
80
55
120
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,80
K/W
Brake Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
10
1200
Rgon=32
±15
600
15
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,3
1,85
1,76
2,2
5
V
µA
A
ns
µC
A/µs
mWs
10
12
324
538
1,38
1,38
46
44
0,581
1,081
Thermal resistance chip to heatsink per chip
R
thJH
3,28
K/W
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
∆R/R
P
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
-5
200
2
3950
3996
B
22000
5
%
mW
mW/K
K
K
copyright Vincotech
4
Revision: 2
V23990-P589-*4*-PM
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
60
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
60
I
C
(A)
Output inverter IGBT
50
50
40
40
30
30
20
20
10
10
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
25
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
25
I
F
(A)
Output inverter FWD
20
20
15
15
T
j
= T
jmax
-25°
C
T
j
= 25°
C
10
10
T
j
= T
jmax
-25°
C
T
j
= 25°
C
5
5
0
0
2
4
6
8
10
V
GE
(V)
12
0
0,0
0,5
1,0
1,5
2,0
V
F
(V)
2,5
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
5
Revision: 2
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