FCP16N60-G datasheet, PDF - EEWORLD Datasheet

FCP16N60-G: Description20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263; Categorysemiconductor Discrete semiconductor; File Size251KB，14 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FCP16N60-G Overview

20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	600 V
Processing package description	LEAD FREE, D2PAK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	20 A
Rated avalanche energy	690 mJ
Maximum drain on-resistance	0.1900 ohm
Maximum leakage current pulse	60 A

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