FCB20N60TM datasheet, PDF - EEWORLD Datasheet

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FCB20N60TM: Description20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263; CategoryDiscrete semiconductor The transistor; File Size251KB，14 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263

FCB20N60TM Parametric

Parameter Name	Attribute value
Brand Name	Fairchild Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	2
Manufacturer packaging code	2LD,TO263, SURFACE MOUNT
Reach Compliance Code	_compli
ECCN code	EAR99
Samacsys Descripti	FCB20N60TM, N-channel MOSFET Transistor 20 A 600 V, 3-Pin D2PAK
Avalanche Energy Efficiency Rating (Eas)	690 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	208 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PCN# : P315A

Issue Date : Feb. 04, 2013

DESIGN/PROCESS CHANGE NOTIFICATION

This is to inform you that a change is being made to the products listed below.

Unless otherwise indicated in the details of this notification, the identified change will have no impact on product

quality, reliability, electrical, visual or mechanical performance and affected products will remain fully compliant to all

published specifications. Products incorporating this change may be shipped interchangeably with existing unchanged

products.

This change is planned to take effect in 90 calendar days from the date of this notification. Please work with your local

Fairchild Sales Representative to manage your inventory of unchanged product if your evaluation of this change will

require more than 90 calendar days.

Please contact your local Customer Quality Engineer within 30 days of receipt of this notification if you require any

additional data or samples. Alternatively, you may send an email request for data, samples or other information to

PCNSupport@fairchildsemi.com.

Implementation of change:

Expected First Shipment Date for Changed Product : May. 05, 2013

Expected First Date Code of Changed Product :1327

Description of Change (From) :

5/6-in wafer fabrication line at Fairchild Semiconductor Bucheon Korea.

Description of Change (To) :

8-in wafer fabrication line at Fairchild Semiconductor Bucheon Korea.

Reason for Change:

Fairchild Semiconductor is increasing wafer fabrication capacity by qualifying an 8-in wafer fabrication line at Fairchild

Semiconductor Bucheon Korea. Quality and reliability remain at the highest standards already demonstrated within

Fairchild's existing products. The reliability qualification results used to qualify the 8-in wafer fabrication line are

summarized below. The specific groups of products/MOSFET technologies are listed in the affected FSIDs list. Design,

die size and layout of the affected products will remain unchanged. There are no changes in the datasheet or electrical

performance.

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