K1B6416B8D-FI700 datasheet, PDF

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K1B6416B8D-FI700: DescriptionPseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48; Categorystorage storage; File Size1MB，35 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K1B6416B8D-FI700 Overview

Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48

K1B6416B8D-FI700 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA, BGA54,6X9,30
Contacts	54
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B54
length	8 mm
memory density	67108864 bit
Memory IC Type	PSEUDO STATIC RAM
memory width	16
Number of functions	1
Number of terminals	54
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA54,6X9,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum standby current	0.00012 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	6 mm

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