DDR DRAM Module, 64MX64, 0.7ns, CMOS, DIMM-184
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SAMSUNG |
Parts packaging code | DIMM |
package instruction | DIMM, DIMM184 |
Contacts | 184 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | DUAL BANK PAGE BURST |
Maximum access time | 0.7 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 166 MHz |
I/O type | COMMON |
JESD-30 code | R-XDMA-N184 |
memory density | 4294967296 bit |
Memory IC Type | DDR DRAM MODULE |
memory width | 64 |
Humidity sensitivity level | 1 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 184 |
word count | 67108864 words |
character code | 64000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 64MX64 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Encapsulate equivalent code | DIMM184 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 2.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
self refresh | YES |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
M368L6423DTL-CB3 | M368L6423DTL-LB0 | M368L6423DTL-LA2 | M368L6423DTL-LB3 | M368L6423DTL-CB0 | M368L6423DTL-CA2 | |
---|---|---|---|---|---|---|
Description | DDR DRAM Module, 64MX64, 0.7ns, CMOS, DIMM-184 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184 | DDR DRAM Module, 64MX64, 0.7ns, CMOS, DIMM-184 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Parts packaging code | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
package instruction | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 |
Contacts | 184 | 184 | 184 | 184 | 184 | 184 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
Maximum access time | 0.7 ns | 0.75 ns | 0.75 ns | 0.7 ns | 0.75 ns | 0.75 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 166 MHz | 133 MHz | 133 MHz | 166 MHz | 133 MHz | 133 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 |
memory density | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit |
Memory IC Type | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
memory width | 64 | 64 | 64 | 64 | 64 | 64 |
Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 | 1 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 184 | 184 | 184 | 184 | 184 | 184 |
word count | 67108864 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words |
character code | 64000000 | 64000000 | 64000000 | 64000000 | 64000000 | 64000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 64MX64 | 64MX64 | 64MX64 | 64MX64 | 64MX64 | 64MX64 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
Encapsulate equivalent code | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | 225 | 225 | 225 | 225 | 225 | 225 |
power supply | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
self refresh | YES | YES | YES | YES | YES | YES |
Maximum supply voltage (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
surface mount | NO | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Maker | SAMSUNG | - | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |