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BM60014FV-C

Description
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
File Size840KB,28 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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BM60014FV-C Overview

Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

Datasheet
Gate Driver Providing Galvanic isolation Series
Isolation voltage 2500Vrms
1ch Gate Driver Providing Galvanic Isolation
BM60014FV-C
General Description
The BM60014FV-C is a gate driver with an isolation
voltage of 2500Vrms, I/O delay time of 120ns, and
minimum input pulse width of 70ns. It incorporates the
fault signal output functions, Under-voltage Lockout
(UVLO) function and Miller clamp function.
Key Specifications
Isolation voltage:
Maximum gate drive voltage:
I/O delay time:
Minimum input pulse width:
2500Vrms
24V
120ns(Max)
70ns(Max)
Features
Providing Galvanic Isolation
Active Miller Clamping
Fault signal output function
Under-voltage Lockout function
AEC-Q100 Qualified
Package
SSOP-B20W
W(Typ) x D(Typ) x H(Max)
6.50mm x 8.10mm x 2.01mm
Applications
IGBT Gate Driver
MOSFET Gate Driver
Typical Application Circuits
GND1
NC
NC
VCC1
INA
INB
XFLT
UVLO1
NC
NC
GND1
UVLO1
Pulse
Generator
UVLO2
S
Q
R
Pre-
driver
NC
GND2
NC
VCC2
OUT
MC
NC
+
NC
GND2
NC
1pin
-
Figure 1. Application Circuits (IGBT Gate Driver)
GND1
NC
NC
VCC1
INA
INB
XFLT
UVLO1
NC
NC
GND1
UVLO1
Pulse
Generator
UVLO2
S
Q
R
Pre-
driver
NC
GND2
NC
VCC2
OUT
MC
NC
+
NC
GND2
NC
1pin
-
Figure 2. Application Circuits (MOSFET Gate Driver)
〇Product
structure : Silicon integrated circuit
.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This
product has no designed protection against radioactive rays
1/25
TSZ02201-0P5P0BH00010-1-2
25.Nov.2013 Rev.001

BM60014FV-C Related Products

BM60014FV-C BM60014FV-E2
Description Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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