75 V, 62 A, 7.2 mΩ Low R
DS(ON)
N ch Trench Power MOSFET
EKI07117
Features
●
●
●
●
●
●
●
●
●
●
V
(BR)DSS
--------------------------------- 75 V (I
D
= 100
µA)
I
D
---------------------------------------------------------- 62 A
R
DS(ON)
---------- 9.7 mΩ max. (V
GS
= 10 V, I
D
= 31.2 A)
Q
g
------25.0 nC (V
GS
= 4.5 V, V
DS
= 38 V, I
D
= 31.2 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Data Sheet
Package
● TO220-3L
(4)
(1) (2) (3)
Not to scale
Applications
● DC-DC converters
● Synchronous Rectification
● Power Supplies
D(2)(4)
G(1)
S(3)
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
E
AS
I
AS
P
D
T
J
T
STG
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
V
DD
= 38 V, L = 1 mH,
I
AS
= 11.2 A, unclamped,
R
G
= 4.7 Ω
Refer to Figure 1
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
Test conditions
Rating
75
± 20
62
125
62
125
126
23.3
116
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
EKI07117-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
1
EKI07117
Thermal Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Thermal Resistance
(
Junction to Case)
Thermal Resistance
(
Junction to Ambient)
Symbol
R
θJC
R
θJA
Test Conditions
Min.
−
−
Typ.
−
−
Max.
1.1
62.5
Unit
°C/W
°C/W
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Drain to Source
On-Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
G
C
iss
C
oss
C
rss
Q
g1
Q
g2
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 38 V
I
D
= 31.2 A
V
GS
= 10 V, R
G
= 4.7 Ω
Refer to Figure 2
V
DS
= 38 V
I
D
= 31.2 A
Test Conditions
I
D
= 100 μA, V
GS
= 0 V
V
DS
= 75 V, V
GS
= 0 V
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 31.2 A, V
GS
= 10 V
I
D
= 15.6 A, V
GS
= 4.5 V
f = 1 MHz
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
Min.
75
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
2.0
7.2
8.2
1.1
4040
370
215
54.0
25.0
9.8
7.3
6.8
6.4
29.4
13.3
0.9
44.3
69.1
Max.
−
100
± 100
2.5
9.7
11.2
−
−
−
−
−
−
−
−
−
−
−
−
1.5
−
−
Unit
V
µA
nA
V
mΩ
mΩ
Ω
pF
nC
ns
V
SD
t
rr
Q
rr
I
S
= 31.2 A, V
GS
= 0 V
I
F
= 31.2 A
di/dt = 100 A/µs
Refer to Figure 3
−
−
−
V
ns
nC
EKI07117-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
2
EKI07117
Test Circuits and Performance Curves
L
I
D
V
DS
R
G
V
GS
0V
V
DD
E
AS
½
V
(BR)DSS
1
2
L
I
AS
2
V
(BR)DSS
V
DD
V
(BR)DSS
I
AS
V
DS
I
D
V
DD
(a) Test Circuit
Figure 1.
Unclamped Inductive Switching
(b) Waveform
R
L
90%
V
GS
V
DS
R
G
V
GS
0V
P.W. = 10
μs
Duty cycle
≤
1 %
(a) Test Circuit
Figure 2.
Switching Time
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
10%
V
DD
V
DS
90%
10%
(b) Waveform
D.U.T.
I
F
L
I
F
V
DD
R
G
V
GS
0V
0V
di/dt
t
rr
I
RM
× 90 %
I
RM
(a) Test Circuit
Figure 3.
Diode Reverse Recovery Time
(b) Waveform
EKI07117-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
3
EKI07117
RDS(ON)-ID characteristics (typical)
VGS=10V
20
25
RDS(ON)-ID characteristics (typical)
VGS=4.5V
140
120
100
ID-VGS characteristics (typical)
VDS=5V
20
15
Tc = 125℃
RDS(ON) (mΩ )
RDS(ON) (mΩ )
Tc = 125℃
10
25℃
75℃
ID (A)
75℃
15
80
60
40
10
25℃
Tc =125℃
75℃
25℃
5
5
20
0
0
20
40
60
80
100
120
0
0
20
40
60
80
100
120
0
0
1
2
3
4
5
ID (A)
ID (A)
VGS (V)
VDS-VGS characteristics (typical)
Tc=25℃
0.6
0.5
0.4
IDR-VSD characteristics (typical)
Tc=25℃
140
120
100
IDR-VSD characteristics (typical)
VDS=0V
140
120
VGS=10V
100
IDR (A)
IDR (A)
VDS (V)
80
60
40
20
0
0
0.5
1
VGS=4.5V
80
Tc =125℃
0.3
0.2
0.1
0.0
0
5
10
15
ID=31.2A
ID=27.2A
ID=15.6A
3V
60
75℃
40
0V
25℃
20
0
1.5
0
0.5
1
1.5
VGS (V)
VSD (V)
VSD (V)
Capacitance-VDS characteristics (typical)
100000
15
VGS - Qg characteristics (typical)
3
Vth-Tc characteristics (typical)
10000
Capacitance (pF)
Ciss
1000
Coss
VGS (V)
5
Vth (V)
10
2
1
Tc=25℃
VDS=38V
ID=31.2A
100
Ta=25℃
VGS=0V
f =1MHz
Crss
ID=1mA
VGS=VDS
10
0
10
20
30
40
50
0
0
20
40
60
0
25
50
75
100
125
150
Qg (nC)
VDS (V)
Tc (℃)
RDS(ON)-Tc characteristics (typical)
18
16
14
18
16
14
RDS(ON)-Tc characteristics (typical)
96
94
92
BVDSS-Tc characteristics (typical)
RDS（ON） (mΩ)
RDS（ON） (mΩ)
10
8
6
4
2
0
25
50
75
100
125
150
10
8
6
4
BVDSS (V)
12
12
90
88
86
84
82
ID=31.2A
VGS=10V
ID=1mA
VGS=0V
2
0
25
50
75
100
ID=15.6A
VGS=4.5V
125
150
80
78
25
50
75
100
125
150
Tc (℃)
Tc (℃)
Tc (℃)
EKI07117-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
4
EKI07117
PD-Ta Derating
120
SAFE OPERATING AREA
1000
ID(pulse) MAX
PT=100μs
90
100
ID (A)
ＰＤ
(W)
60
10
PT=1ms
30
1
1 shot
Tc=25℃
0
0.1
0
50
100
150
0.1
1
10
100
Ta (℃)
VDS (V)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+01
Rth j-c (℃/W)
1.E+00
1.E-01
Tc = 25℃
1shot
VDS < 10V
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
P.T. (sec)
EKI07117-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
May 09, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2013
5
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