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MCR8D

Description
SILICON CONTROLLED RECTIFIERS
CategoryAnalog mixed-signal IC    Trigger device   
File Size194KB,2 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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MCR8D Overview

SILICON CONTROLLED RECTIFIERS

MCR8D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
JESD-609 codee0
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceTin/Lead (Sn/Pb)
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
DIGITRON SEMICONDUCTORS
MCR8D, MCR8M, MCR8N
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
Peak repetitive reverse voltage
(T
J
= -40 to +125°C)
MCR8D
MCR8M
MCR8N
On-state RMS current
(all conduction angles)
Peak non-repetitive surge current
(one half-cycle, 60Hz, T
J
= 125°C)
Circuit fusing
(t = 8.3ms)
Peak gate power
(pulse width
1.0µs, T
C
= 80°C)
Average gate power
(t = 8.3ms, T
C
= 80°C)
Peak gate current
(pulse width
1.0µs, T
C
= 80°C)
Operating temperature range
Storage temperature range
Symbol
V
DRM
V
RRM
400
600
800
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
8
80
26.5
5
0.5
2
-40 to +125
-40 to +150
V
Value
Unit
A
A
A
2
s
W
W
A
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Maximum lead temperature for soldering
purposes 1/8” from case for 10s
Symbol
R
ӨJC
R
ӨJA
T
L
Maximum
2.0
62.5
260
Unit
°C/W
°C/W
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak forward blocking current
Peak reverse blocking current
(V
AK
= Rated V
DRM
or V
RRM
, gate open)
T
J
= 25°C
T
J
= 125°C
ON CHARACTERISTICS
Peak on-state voltage *
(I
TM
= 16A)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
Holding current (anode voltage = 12V)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(V
D
= rated V
DRM
, exponential waveform, gate open, T
J
= 125°C)
* Pulse width
2.0ms, duty cycle
2%.
Symbol
I
DRM
I
RRM
Min
Typ
Max
Unit
mA
-
-
-
-
0.01
2.0
V
TM
I
GT
V
GT
I
H
-
2.0
0.5
4.0
-
7.0
0.65
22
1.8
15
1.0
30
V
mA
V
mA
dv/dt
50
200
-
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130108

MCR8D Related Products

MCR8D MCR8M MCR8N
Description SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow
JESD-609 code e0 e0 e0
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR
Base Number Matches 1 1 -
Maker - Digitron Digitron

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