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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> 2N886
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2N886

Description
SILICON CONTROLLED RECTIFIER
CategoryAnalog mixed-signal IC    Trigger device   
File Size336KB，5 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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2N886 Overview

SILICON CONTROLLED RECTIFIER

2N886 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-XBCY-W3
Reach Compliance Codeunknow
Nominal circuit commutation break time15 µs
ConfigurationSINGLE
Maximum DC gate trigger current0.02 mA
Maximum DC gate trigger voltage0.6 V
Maximum holding current3 mA
JEDEC-95 codeTO-18
JESD-30 codeO-XBCY-W3
JESD-609 codee0
On-state non-repetitive peak current7 A
Number of components1
Number of terminals3
Maximum on-state current500 A
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum rms on-state current0.5 A
Off-state repetitive peak voltage60 V
Repeated peak reverse voltage60 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1

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DIGITRON SEMICONDUCTORS
2N877-2N881, 2N885-2N889
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Peak forward blocking voltage
Part number
V
FXM
T
J
= -65° to 125°C
R
GK
= 1000 ohms maximum
2N877, 2N885
2N878, 2N886
2N879, 2N887
2N880, 2N888
2N881, 2N889
Rating
Peak forward voltage
RMS on-state current
Peak one cycle surge (non-repetitive) on-state current
Peak forward gate power dissipation
Average forward gate power dissipation
Peak gate voltage, forward and reverse
Storage temperature
Operating temperature
30
60
100
150
200
Working and repetitive peak
reverse voltage
V
ROM
(wkg) and V
ROM
(rep)
T
J
= -65° to 150°C
30
60
100
150
200
Symbol
V
F(pk)
I
T(RMS)
I
FM
P
GM
P
G(AV)
V
GFM
, V
GRM
T
stg
T
J
Value
300
0.5
7.0
0.1
0.01
6.0
-65 to 150
-65 to 150
Non-repetitive peak reverse voltage
V
ROM
(non-rep) < 5 milliseconds
T
J
= -65° to 125°C
45
90
130
200
275
Unit
V
A
A
W
W
V
°C
°C
V
V
V
V
V
Units
ELECTRICAL CHARACTERISTICS
Characteristic
Forward blocking current
2N877-2N881
2N885-2N889
Reverse blocking current
2N877-2N881
I
RX
2N885-2N889
Reverse gate current
Peak on-state voltage
Holding current
2N877-2N881
2N885-2N889
Critical rate of rise of applied forward voltage
Turn-on time
(Delay time + rise time)
Circuit commutated turn-off time (all types)
0.4
I
H
dv/dt
t
d
+ t
r
0.4
-
1.7
1.1
40
5.0
3.0
-
-
-
t
off
-
15
µs
mAdc
T
J
= 125°C, R
GK
= 1000ohms, V
FXM
= rated
V
FXM
T
J
= 25°C, V
FX
= rated V
FXM
, I
FM
= 1A, gate
supply: 6V, 300ohms
T
J
= 125°C, R
GK
= 1000ohms, I
FM
= 1A,
I
R
(recovery) = 1A, reapplied V
FXM
= rated,
rate of rise of reapplied forward blocking
voltage = 20V/µs
I
GRM
V
FM
-
-
-
-
-
-
0.1
10
0.1
10
1
1.3
10
100
1
20
10
1.9
µAdc
V
µAdc
-
I
FX
-
-
-
0.03
10
0.03
10
10
100
1
20
µAdc
Symbol
Min
Typ
Max
Units
Test Condition
V
FX
= rated V
FXM
, R
GK
= 1000ohms
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
RX
= rated V
ROM
(rep)
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
GRM
= 2V, T
J
= 25°C
T
J
= 25°C, I
FX
= 1A, single, half sinewave
pulse, 2.0ms wide max.
T
J
= 25°C, R
GK
= 1000ohms, V
FX
= 24V dc
V/µs
µs
-
1.0
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130123

2N886 Related Products

2N886 2N877 2N878 2N879 2N880 2N881 2N885 2N887 2N888 2N889
Description SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER SILICON CONTROLLED RECTIFIER
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow unknow
Maximum DC gate trigger current 0.02 mA 0.2 mA 0.2 mA 0.2 mA 0.2 mA 0.2 mA 0.02 mA 0.02 mA 0.02 mA 0.02 mA
Maximum DC gate trigger voltage 0.6 V 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V 0.6 V 0.6 V 0.6 V 0.6 V
Maximum holding current 3 mA 5 mA 1 mA 5 mA 5 mA 5 mA 1 mA 1 mA 1 mA 1 mA
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
On-state non-repetitive peak current 7 A 20 A 20 A 20 A 20 A 20 A 20 A 20 A 20 A 20 A
Maximum on-state current 500 A 350 A 350 A 350 A 350 A 350 A 350 A 350 A 350 A 350 A
Maximum operating temperature 150 °C 100 °C 100 °C 100 °C 100 °C 100 °C 100 °C 100 °C 100 °C 100 °C
Minimum operating temperature -65 °C -60 °C -60 °C -60 °C -60 °C -60 °C -60 °C -60 °C -60 °C -60 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Off-state repetitive peak voltage 60 V 30 V 60 V 100 V 150 V 200 V 30 V 100 V 150 V 200 V
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 1 1 1 1
Maximum leakage current - 0.1 mA 0.02 mA 0.1 mA 0.1 mA 0.1 mA 0.02 mA 0.02 mA 0.02 mA 0.02 mA

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