EEWORLDEEWORLDEEWORLD

Part Number

Search

NAND512W3B3AN1T

Description
64MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
Categorystorage    storage   
File Size999KB,59 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

NAND512W3B3AN1T Overview

64MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

NAND512W3B3AN1T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionTSOP1, TSSOP48,.8,20
Contacts48
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time35 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density536870912 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size512
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size2K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
width12 mm
NAND512-B, NAND01G-B NAND02G-B
NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 8 Gbit memory array
– Up to 64Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
BLOCK SIZE
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM AND CACHE READ
MODES
– Internal Cache Register to improve the
program and read throughputs
FAST BLOCK ERASE
– Block erase time: 2ms (typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
– for simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
– Boot from NAND support
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
USOP48 12 x 17 x 0.65mm
FBGA
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
LFBGA63 9.5 x 12 x 1.4mm
DATA PROTECTION
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
1/59
February 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Ride: Which country will be the ultimate winner in 5G? Reply to this post and give points
[align=center][media=swf,500,375]http://player.youku.com/player.php/sid/XNDEwMzAxMjQ3Ng==/v.swf[/media][/align] [align=center][/align] [size=4] As we all know, China is now the leader in 5G. The Ameri...
高进 RF/Wirelessly
How to clearly mark chip pins with multiple functions in the schematic library?
[i=s]This post was last edited by lingking on 2019-5-24 19:09[/i] The chip pins of a microcontroller or processor may have many functions. When making a schematic library, many people directly copy an...
lingking Integrated technical exchanges
The charging current of IP5306 is 2.1A. Will it explode if it charges a 3.7-4.2V, 1000mAH, 1C lithium battery?
RT1 The picture below is the IP5306 charging and discharging moduleThe picture below is a 3.7V 1000mAH 1C lithium battery...
oyhprince Power technology
TMS320F28369D Review Summary
@ com0104988 【TMS320 frequency measurement】First post for newbies! TMS320F28369D Launchpad unboxing + knowledge popularization 【TMS320 frequency measurement】Newbie's second post! TMS320F28379D Launchp...
okhxyyo Microcontroller MCU
Girl with spinal muscular atrophy feeds horse with Kinova robotic arm
The Kinova robotic arm, which can not only perform a variety of daily chores, but can even apply makeup to its owner. The arm is made of a lightweight carbon fiber material that can be mounted on any ...
硅步Robot Talking
【EETALK】What do you think about Apple starting to research GaN chargers?
As a third-generation semiconductor material, GaN is smaller, lighter, more efficient, and generates less heat than traditional chargers. Therefore, various mobile phone brands, power supply manufactu...
okhxyyo Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号