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DN2540N3-GP013

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size847KB,8 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

DN2540N3-GP013 Overview

SMALL SIGNAL, FET

DN2540N3-GP013 Parametric

Parameter NameAttribute value
MakerMicrochip
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain current (ID)0.12 A
Maximum drain-source on-resistance25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN2540
General Description
Applications
The Supertex DN2540 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Part Number
DN2540N3-G
DN2540N3-G P002
Product Summary
Packing
1000/Bag
BV
DSX
/BV
DGX
400V
Package Option
TO-92
R
DS(ON)
(max)
I
DSS
(min)
25Ω
150mA
DN2540N3-G P003
DN2540N3-G P005
DN2540N3-G P013
DN2540N3-G P014
DN2540N5-G
DN2540N8-G
TO-220
TO-243AA (SOT-89)
TO-92
2000/Reel
Pin Configuration
DRAIN
50/Tube
2000/Reel
DRAIN
SOURCE
GATE
GATE
DRAIN
SOURCE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
TO-92
DRAIN
TO-220
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Typical Thermal Resistance
Package
TO-92
TO-220
TO-243AA (SOT-89)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
θ
ja
132
O
C/W
29
O
C/W
133
O
C/W
Doc.# DSFP-DN2540
B060313
Supertex inc.
www.supertex.com
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