IXFN66N50Q2 datasheet, PDF - EEWORLD Datasheet

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IXFN66N50Q2: DescriptionPower Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; CategoryDiscrete semiconductor The transistor; File Size150KB，5 Pages; ManufacturerIXYS; Environmental Compliance

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IXFN66N50Q2 Overview

Power Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

IXFN66N50Q2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	IXYS
package instruction	FLANGE MOUNT, R-XUFM-X4
Contacts	4
Reach Compliance Code	compliant
Other features	AVALANCHE RATED, UL RECOGNIZED
Avalanche Energy Efficiency Rating (Eas)	4000 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	66 A
Maximum drain current (ID)	66 A
Maximum drain-source on-resistance	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUFM-X4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	735 W
Maximum pulsed drain current (IDM)	264 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Nickel (Ni)
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

IXFN66N50Q2 Preview

HiPerFET

Power MOSFET

IXFN66N50Q2

N-Channel Enhancement Mode

Avalanche Rated, Low Q

, Low Intrinsic R

High dV/dt, Low t

DSS

= 500 V

D25

= 66 A

Ω

DS(on)

= 80 mΩ

≤

250 ns

miniBLOC, SOT-227 B (IXFN)

E153432

Symbol

DSS

DGR

GSM

D25

dv/dt

stg

ISOL

Weight

50/60 Hz, RMS, t = 1 minute

Mounting torque

Terminal connection torque

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 1 MΩ

Continuous

Transient

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤

, di/dt

≤

100 A/µs, V

≤

DSS

≤

150°C, R

= 2

Ω

= 25°C

Maximum Ratings

500

±30

±40

264

4.0

735

-55 ... +150

150

-55 ... +150

2500

V/ns

°C

Features

Double metal process for low

gate resistance

miniBLOC, with Aluminium nitride

isolation

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

Applications

DC-DC converters

Switched-mode and resonant-mode

power supplies

DC choppers

Pulse generators

Advantages

Easy to mount

Space savings

High power density

G = Gate

S = Source

D = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

1.5/13 Nm/lb.in.

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

500

2.0

4.5

DSS

GS(th)

GSS

DSS

DS(on)

= 0 V, I

= 3mA

= V

, I

= 8mA

±30

V, V

= 0

= V

DSS

= 0 V

= 10 V, I

= 0.5 ï I

D25

= 25°C

= 125°C

±200

µA

3 mA

80 mΩ

DS99077A(08/05)

IXFN66N50Q2

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

Note 1

6800

= 0 V, V

= 25 V, f = 1 MHz

1200

270

= 10 V, V

= 0.5 ï V

DSS

, I

= 0.5 ï I

D25

= 1

Ω

(External)

199

= 10 V, V

= 0.5 ï V

DSS

, I

= 0.5 ï I

D25

0.17

0.05

K/W

M4 screws (4x) supplied

Dim.

Millimeter

Min.

Max.

31.50

7.80

4.09

14.91

30.12

38.00

11.68

8.92

0.76

12.60

25.15

1.98

4.95

26.54

3.94

4.72

24.59

-0.05

31.88

8.20

4.29

15.11

30.30

38.23

12.22

9.60

0.84

12.85

25.42

2.13

5.97

26.90

4.42

4.85

25.07

0.1

Inches

Min.

Max.

1.240

0.307

0.161

0.587

1.186

1.496

0.460

0.351

0.030

0.496

0.990

0.078

0.195

1.045

0.155

0.186

0.968

-0.002

1.255

0.323

0.169

0.595

1.193

1.505

0.481

0.378

0.033

0.506

1.001

0.084

0.235

1.059

0.174

0.191

0.987

0.004

miniBLOC, SOT-227 B Outline

iss

oss

rss

d(on)

d(off)

G(on)

thJC

thCK

= 10 V; I

= 0.5 ï I

D25

Source-Drain Diode

Symbol

Test Conditions

= 0 V

Repetitive;

pulse width limited by T

= I

, V

= 0 V, Note 1

= 25A

-di/dt = 100 A/µs

= 100 V

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

264

1.5

250

1.0

µC

Note: 1. Pulse test, t

≤

300

µs,

duty cycle d

≤

2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592

one or moreof the following U.S. patents: 4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

6,683,344

6,710,405B2

6,710,463

6,727,585

6,759,692

6771478 B2

IXFN66N50Q2

Fig. 1. Output Characteristics

@ 25

= 10V

140

120

160

= 10V

Fig. 2. Extended Output Characteristics

@ 25

- Amperes

100

5.5V

4.5V

D S

- Volts

Fig. 3. Output Characteristics

@ 125

= 10V

5.5V

3.1

2.8

= 10V

D S

- Volts

Fig. 4. R

DS(on

)

Norm alized to 0.5 I

D25

Value vs. Junction Tem perature

D S ( o n )

- Normalized

2.5

2.2

1.9

1.6

1.3

0.7

= 66A

= 33A

- Amperes

4.5V

3.5V

0.4

-50

-25

100

125

150

D S

- Volts

Fig. 5. R

DS(on)

Norm alized to

0.5 I

D25

Value vs. I

2.8

2.6

= 10V

= 125∫C

- Degrees Centigrade

Fig. 6. Drain Current vs. Case

Tem perature

D S ( o n )

- Normalized

2.4

2.2

1.8

1.6

1.4

1.2

0.8

- Amperes

= 25∫C

100

120

140

160

-50

-25

100

125

150

- Amperes

- Degrees Centigrade

IXFN66N50Q2

Fig. 7. Input Adm ittance

100

= -40∫C

25∫C

125∫C

Fig. 8. Transconductance

f s

- Siemens

- Amperes

3.5

4.5

5.5

6.5

= 125∫C

25∫C

-40∫C

100

120

G S

- Volts

Fig. 9. Source Current vs.

Source-To-Drain Voltage

180

160

140

= 250V

= 33A

= 10mA

- Amperes

Fig. 10. Gate Charge

- Amperes

120

G S

- Volts

= 125∫C

= 25∫C

0.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

100

100 120 140 160 180 200

S D

- Volts

Fig. 11. Capacitance

10000

C iss

1000

- nanoCoulombs

Fig. 12. Forw ard-Bias

Safe Operating Area

Capacitance - picoFarads

DS(on)

Limit

- Amperes

100

25µs

100µs

1ms

1000

C oss

= 150∫C

= 25∫C

100

10ms

f = 1MHz

100

C rss

1000

D S

- Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

D S

- Volts

IXFN66N50Q2

Fig. 13. Maxim um Transient Therm al Resistance

1.00

( t h ) J C

∫

C / W

0.10

0.01

0.00

0.1

100

1000

10000

Pulse Width - milliseconds

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