IDT71V3579S80BGI datasheet, PDF

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IDT71V3579S80BGI: DescriptionCache SRAM, 256KX18, 8ns, CMOS, PBGA119, BGA-119; Categorystorage storage; File Size231KB，22 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71V3579S80BGI Overview

Cache SRAM, 256KX18, 8ns, CMOS, PBGA119, BGA-119

IDT71V3579S80BGI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	BGA-119
Contacts	119
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	8 ns
Other features	FLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
length	22 mm
memory density	4718592 bit
Memory IC Type	CACHE SRAM
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	2.36 mm
Maximum standby current	0.035 A
Minimum standby current	3.14 V
Maximum slew rate	0.21 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

IDT71V3579S80BGI Related Products

	IDT71V3579S80BGI	IDT71V3579S80BGI8
Description	Cache SRAM, 256KX18, 8ns, CMOS, PBGA119, BGA-119	Cache SRAM, 256KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
Is it Rohs certified?	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	BGA	BGA
package instruction	BGA-119	14 X 22 MM, PLASTIC, BGA-119
Contacts	119	119
Reach Compliance Code	not_compliant	not_compliant
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	8 ns	8 ns
Other features	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)	100 MHz	100 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-PBGA-B119	R-PBGA-B119
JESD-609 code	e0	e0
length	22 mm	22 mm
memory density	4718592 bit	4718592 bit
Memory IC Type	CACHE SRAM	CACHE SRAM
memory width	18	18
Humidity sensitivity level	3	3
Number of functions	1	1
Number of terminals	119	119
word count	262144 words	262144 words
character code	256000	256000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	256KX18	256KX18
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA
Encapsulate equivalent code	BGA119,7X17,50	BGA119,7X17,50
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	2.36 mm	2.36 mm
Maximum standby current	0.035 A	0.035 A
Minimum standby current	3.14 V	3.14 V
Maximum slew rate	0.21 mA	0.21 mA
Maximum supply voltage (Vsup)	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
Terminal form	BALL	BALL
Terminal pitch	1.27 mm	1.27 mm
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	14 mm	14 mm

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