EEWORLDEEWORLDEEWORLD

Part Number

Search

MBRD660CTP

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, PLASTIC, DPAK-3
CategoryDiscrete semiconductor    diode   
File Size423KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
Download Datasheet Parametric View All

MBRD660CTP Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, PLASTIC, DPAK-3

MBRD660CTP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Parts packaging codeDPAK
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Maximum non-repetitive peak forward current75 A
Number of components2
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MBRD620CT
THRU
MBRD660CT
6 Amp Schottky
Barrier Rectifier
20 to 60 Volts
DPACK
S
A
1
G
2
3
D
4
B F
V
Features
Extremely Fast Switching
Extremely Low Forward Drop.
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Maximum Ratings
Operating Temperature:- 65℃ to +150℃
Storage Temperature: -65℃ to +175℃
Maximum Thermal Resistance (Per Leg):
6℃/W Junction To Case
80℃/W
Junction To Ambient
Maximum
Maximum
Recurrent Maximu
DC
Device
MCC
m RMS
Peak
Blocking
Marking
Part Number
Voltage
Reverse
Voltage
Voltage
MBRD620CT MBRD620CT
20V
14V
20V
MBRD630CT MBRD630CT
30V
21V
30V
MBRD640CT MBRD640CT
40V
28V
40V
MBRD650CT MBRD650CT
50V
35V
50V
MBRD660CT MBRD660CT
60V
42V
60V
Average Forward
Current (T
C
= 100℃)
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage*
3.0A
6.0A
75A
.70V
.65V
.90V
.85V
Per Diode
Per Device
8.3ms, half sine
I
FM
= 3.0A; T
C
= 25℃
I
FM
= 3.0A; T
C
=1 25℃
I
FM
=6.0A; T
C
= 25℃
I
FM
= 6.0A; T
C
=1 25℃
C
Electrical Characteristics @ 25°C Unless Otherwise Specified
I
F(AV)
I
FSM
J
E
K
1
2,4
3
DIMENSIONS
INCHES
MM
MIN
5.97
5.21
2.19
0.64
0.99
6.35
2.28
0.023
---
0.410
0.050
0.48
0.51
9.40
0.88
0.58
---
10.42
1.27
MAX
6.22
5.46
2.38
0.89
1.14
6.73
NOTE
V
F
Maximum DC
T
A
= 25℃
.1mA
Reverse Current At
I
R
15mA
Rated DC Blocking
T
A
= 125℃
Voltage
Peak Repetitive
Rated V
R
, Square
Forward Current,
I
FRM
6A
Wave, 20 KHz
T
C
=130℃, per diode
Peak Repetitive
2μs, 1 KHz
Reverse Surge
I
RRM
1A
Current
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
DIM
A
B
C
D
E
F
G
J
K
S
V
MIN
0.235
0.205
0.086
0.025
0.035
0.250
0.090
0.018
0.020
0.370
0.035
MAX
0.245
0.215
0.094
0.035
0.045
0.265
SUGGESTED SOLDER PAD LAYOUT
Revision: 2
www.mccsemi.com
1 of 4
2006/05/06
Power amplifier related operation & application video (continuously updated)
Application of ATA-2022H power amplifier in ultrasonic nondestructive testing...
aigtekatdz Test/Measurement
TSMC and others attended the US summit and were strongly required to hand over commercial confidential data within 45 days
According to Taiwan's "China Times News" on the 27th, due to the global "chip shortage" has not been alleviated, the US Department of Commerce held another semiconductor summit last week, including TS...
eric_wang Talking
About msp430g2553 timer to generate pwm
#include "msp430g2553.h"//p1.2 outputs 50% square wave, p2.1 and 2.4 output 50% and 25% waveformsvoid main (void){WDTCTL= WDTPW + WDTHOLD; //Set the watchdog control register and turn off the watchdog...
Aguilera Microcontroller MCU
Recruitment: Senior embedded development engineer in automotive electronics; based in Chengdu Pidu.
Job position: Senior embedded development engineer Responsibilities: 1. Design and decompose the positioning product system architecture according to customer needs ; 2. Responsible for software devel...
mgstanley Recruitment
Wake up the pyboard via PA0
In low-power applications, in order to reduce power consumption, we need to put the microcontroller into sleep mode and then wake it up through an external button or RTC. However, until version v1.11,...
dcexpert MicroPython Open Source section
What exactly is the difference between IBUFDS and IBUFGDS
The following is the information I got from the Xilinx official forumThe definitions of the two refer to the following descriptions: IBUFDS: This design element is an input buffer that supports low-vo...
heningbo FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号