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KM718B90J-12

Description
Cache SRAM, 64KX18, BICMOS, PQCC52, PLASTIC, LCC-52
Categorystorage    storage   
File Size291KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KM718B90J-12 Overview

Cache SRAM, 64KX18, BICMOS, PQCC52, PLASTIC, LCC-52

KM718B90J-12 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeLCC
package instructionQCCJ,
Contacts52
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Other featuresSELF-TIMED WRITE; BYTE WRITE; BURST COUNTER
JESD-30 codeS-PQCC-J52
length19.05 mm
memory density1179648 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of ports1
Number of terminals52
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX18
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height4.52 mm
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyBICMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
width19.05 mm

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KM718B90J-12 KM718B90J-9 KM718B90J-10 KM718B90J-8
Description Cache SRAM, 64KX18, BICMOS, PQCC52, PLASTIC, LCC-52 Cache SRAM, 64KX18, 9ns, BICMOS, PQCC52, PLASTIC, LCC-52 Cache SRAM, 64KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52 Cache SRAM, 64KX18, 8ns, BICMOS, PQCC52, PLASTIC, LCC-52
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code LCC LCC LCC LCC
package instruction QCCJ, QCCJ, LDCC52,.8SQ QCCJ, LDCC52,.8SQ QCCJ, LDCC52,.8SQ
Contacts 52 52 52 52
Reach Compliance Code unknown unknown unknown unknow
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
JESD-30 code S-PQCC-J52 S-PQCC-J52 S-PQCC-J52 S-PQCC-J52
length 19.05 mm 19.05 mm 19.05 mm 19.05 mm
memory density 1179648 bit 1179648 bit 1179648 bit 1179648 bi
Memory IC Type CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
memory width 18 18 18 18
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 52 52 52 52
word count 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 64KX18 64KX18 64KX18 64KX18
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Exportable YES YES YES YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QCCJ QCCJ QCCJ QCCJ
Package shape SQUARE SQUARE SQUARE SQUARE
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 4.52 mm 4.52 mm 4.52 mm 4.52 mm
Maximum supply voltage (Vsup) 5.25 V 5.25 V 5.25 V 5.25 V
Minimum supply voltage (Vsup) 4.75 V 4.75 V 4.75 V 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount YES YES YES YES
technology BICMOS BICMOS BICMOS BICMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form J BEND J BEND J BEND J BEND
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location QUAD QUAD QUAD QUAD
width 19.05 mm 19.05 mm 19.05 mm 19.05 mm
Is it Rohs certified? - incompatible incompatible incompatible
Maximum access time - 9 ns 10 ns 8 ns
I/O type - COMMON COMMON COMMON
JESD-609 code - e0 e0 e0
Encapsulate equivalent code - LDCC52,.8SQ LDCC52,.8SQ LDCC52,.8SQ
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply - 5 V 5 V 5 V
Maximum standby current - 0.09 A 0.09 A 0.09 A
Minimum standby current - 4.75 V 4.75 V 4.75 V
Maximum slew rate - 0.27 mA 0.26 mA 0.27 mA
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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