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DRA9114E

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size467KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DRA9114E Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN

DRA9114E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)35
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.125 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

DRA9114E Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
DRA9114E
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9114E
DRA5114E in SSMini3 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SSMini3-F3-B
Name
Pin
1: Base
2: Emitter
3: Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
–50
–50
–100
125
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
Marking Symbol: LB
Internal Connection
B
R
1
R
2
C
E
Resistance value
R
1
R
2
10
10
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
0.8
10
1.0
–2.1
– 0.8
+30%
1.2
35
– 0.25
Min
–50
–50
– 0.1
– 0.5
– 0.5
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2010
Ver. CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA9114E
DRA9114E_PT-Ta
DRA9114E_IC-VCE
DRA9114E_hFE-IC
P
T
T
a
150
−120
T
a
=
25°C
I
C
V
CE
300
I
B
= −800 µA
h
FE
I
C
V
CE
= −10
V
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
−600 µA
−80
−60
−300 µA
−40
−20
−100 µA
0
−200 µA
−500 µA
−400 µA
100
75
50
25
0
Forward current transfer ratio h
FE
125
−100
−700 µA
250
200
150
100
50
0
0.1
T
a
=
85°C
25°C
−30°C
0
40
80
120
160
200
0
−2
−4
−6
−8
−10
−12
−1
−10
−100
Ambient temperature T
a
(
°C
)
DRA9114E_VCEsat-IC
Collector-emitter voltage V
CE
(V)
DRA9114E_I
O
-V
IN
Collector current I
C
(mA)
DRA9114E_VIN-IO
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
= 20
−10
V
O
= −5
V
I
O
V
IN
−100
V
O
= −
0.2 V
V
IN
I
O
Output current I
O
(mA)
Input voltage V
IN
(V)
−1
−1
T
a
=
85°C
25°C
−10
T
a
= −30°C
25°C
−1
85°C
T
a
=
85°C
25°C
−30°C
−10
−1
−30°C
0.1
−10
−2
0.01
0.1
−1
−10
−100
−10
−3
0
0.5
−1.0
−1.5
−2.0
0.1
0.1
−1
−10
−100
Collector current I
C
(mA)
Input voltage V
IN
(V)
Output current I
O
(mA)
2
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA9114E
SSMini3-F3-B
Unit: mm
1.60
0.03
+0.05
+0.05
0.26
0.02
3
0.85
0.03
1.60
±0.05
+0.05
1
(0.50)
2
(0.50)
0.13
0.02
+0.05
1.00
±0.05
(5°)
0.375
±0.05
(5°)
0 to 0.10
0.70
0.03
+0.05
(0.45)
Ver. CED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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