FEPE16AT thru FEPE16GT
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Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
TO-220AB
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
FEPE16XT Series
TYPICAL APPLICATIONS
PIN 1
PIN 3
PIN 2
CASE
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
2 x 8.0 A
50 V to 400 V
200 A, 125 A
35 ns, 50 ns
0.95 V, 1.30 V
150 °C
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commerical grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating and storage temperature range
SYMBOL
FEPE16AT FEPE16BT FEPE16CT FEPE16DT FEPE16FT FEPE16GT UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
200
- 55 to + 150
50
35
50
100
70
100
150
105
150
16
125
200
140
200
300
210
300
400
280
400
V
V
V
A
A
°C
Revision: 30-Jan-13
Document Number: 89981
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEPE16AT thru FEPE16GT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
Maximum DC reverse
current per diode
Maximum reverse recovery
time per diode
Typical junction
capacitance per diode
TEST CONDITIONS
8.0 A
at
rated
V
R
T
C
= 25 °C
T
C
= 100 °C
t
rr
C
J
35
85
SYMBOL
FEPE16AT FEPE16BT FEPE16CT FEPE16DT FEPE16FT FEPE16GT UNIT
V
F (1)
I
R (2)
500
50
ns
pF
0.95
10
μA
1.30
V
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
per diode
per device
SYMBOL
FEPE16AT
R
JC
R
JA
(1)
FEPE16BT FEPE16CT FEPE16DT
2.2
50
FEPE16FT
FEPE16GT UNIT
°C/W
Note
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
PREFERRED P/N
FEPE16GT-E3/45
UNIT WEIGHT (g)
1.92
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
20
300
Peak Forward
Surge
Current (A)
Resistive or Inductive Load
Average Forward Current (A)
16
250
T
C
= 100 °C
8.3 ms
Single
Half
Sine-Wave
200
12
150
8
100
4
50
0
0
50
100
150
0
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 30-Jan-13
Document Number: 89981
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEPE16AT thru FEPE16GT
www.vishay.com
Vishay General Semiconductor
1000
50 V to 400 V
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
Instantaneous Forward Current (A)
10
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Junction Capacitance (pF)
T
J
= 125 °C
100
1
50 V to 200 V
300 V to 400 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
50 V to 400 V
T
J
= 125 °C
Instantaneous Reverse Leakage
Current (μA)
10
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.185 (4.70)
0.175 (4.44)
0.415 (10.54)
Max.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.159 (4.04)
0.143 (3.64)
0.260 (6.6)
0.236 (6.0)
0.603 (15.32)
0.573 (14.55)
1
0.060 (1.50)
0.047 (1.20)
2
3
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
Pin 1
Pin 2
0.022 (0.56)
0.014 (0.36)
0.040 (0.84)
0.024 (0.62)
0.10 (2.54)
0.10 (2.54)
Pin 3
Revision: 30-Jan-13
Document Number: 89981
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000