IRFBC40-019PBF datasheet, PDF - EEWORLD Datasheet

IRFBC40-019PBF: DescriptionPower Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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IRFBC40-019PBF Overview

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	570 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	6.2 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	25 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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