H5TQ2G43BFR-G7C datasheet, PDF

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H5TQ2G43BFR-G7C: DescriptionDDR DRAM, 512MX4, 20ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82; Categorystorage storage; File Size304KB，36 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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H5TQ2G43BFR-G7C Overview

DDR DRAM, 512MX4, 20ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82

H5TQ2G43BFR-G7C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA82,11X13,32
Contacts	82
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	20 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	533 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B82
length	11.1 mm
memory density	2147483648 bit
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	82
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	512MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA82,11X13,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum supply voltage (Vsup)	1.575 V
Minimum supply voltage (Vsup)	1.425 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9.4 mm

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2Gb DDR3 SDRAM

Lead-Free&Halogen-Free

(RoHS Compliant)

H5TQ2G43BFR-xxC

H5TQ2G83BFR-xxC

H5TQ2G63BFR-xxC

* Hynix Semiconductor reserves the right to change products or specifications without notice.

Rev. 1.1 / Jun. 2010

H5TQ2G43BFR-G7C Related Products

	H5TQ2G43BFR-G7C	H5TQ2G43BFR-PBC	H5TQ2G43BFR-RDC	H5TQ2G43BFR-H9C
Description	DDR DRAM, 512MX4, 20ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82	DDR DRAM, 512MX4, 20ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82	DDR DRAM, 512MX4, 20ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82	DDR DRAM, 512MX4, 20ns, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA82,11X13,32	TFBGA, BGA82,11X13,32	TFBGA, BGA82,11X13,32	TFBGA, BGA82,11X13,32
Contacts	82	82	82	82
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Maximum access time	20 ns	20 ns	20 ns	20 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	533 MHz	800 MHz	667 MHz	667 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B82	R-PBGA-B82	R-PBGA-B82	R-PBGA-B82
length	11.1 mm	11.1 mm	11.1 mm	11.1 mm
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	4	4	4	4
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	82	82	82	82
word count	536870912 words	536870912 words	536870912 words	536870912 words
character code	512000000	512000000	512000000	512000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
organize	512MX4	512MX4	512MX4	512MX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA82,11X13,32	BGA82,11X13,32	BGA82,11X13,32	BGA82,11X13,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	1.5 V	1.5 V	1.5 V	1.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8
Maximum supply voltage (Vsup)	1.575 V	1.575 V	1.575 V	1.575 V
Minimum supply voltage (Vsup)	1.425 V	1.425 V	1.425 V	1.425 V
Nominal supply voltage (Vsup)	1.5 V	1.5 V	1.5 V	1.5 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	9.4 mm	9.4 mm	9.4 mm	9.4 mm

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