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MT45W4MW16BBB-608LIT

Description
Pseudo Static RAM, 4MX16, 60ns, CMOS, PBGA54, 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54
Categorystorage    storage   
File Size760KB,55 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT45W4MW16BBB-608LIT Overview

Pseudo Static RAM, 4MX16, 60ns, CMOS, PBGA54, 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, LEAD FREE, VFBGA-54

MT45W4MW16BBB-608LIT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA, BGA54,6X9,30
Contacts54
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time60 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B54
JESD-609 codee1
length8 mm
memory density67108864 bit
Memory IC TypePSEUDO STATIC RAM
memory width16
Number of functions1
Number of terminals54
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA54,6X9,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8,1.8/3 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum standby current0.0001 A
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width6 mm
4 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
BURST
CellularRAM
TM
Features
• Single device supports asynchronous, page, and
burst operations
• V
CC
, V
CC
Q Voltages
1.70V–1.95V V
CC
1.70V–3.30V V
CC
Q
• Random Access Time: 70ns
• Burst Mode Write Access
Continuous burst
Burst Mode Read Access
4, 8, or 16 words, or continuous burst
MAX clock rate: 104 MHz (
t
CLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
t
ACLK: 6.5ns @ 104 MHz
• Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Initial access, burst READ:
(39ns [4 clocks] @ 104 MHz) < 35mA
Continuous burst READ < 15mA
Standby: 120µA—standard
100µA—low-power option
Deep power-down < 10µA
• Low-Power Features
Temperature Compensated Refresh (TCR)
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
Options
• Configuration:
4 Meg x 16
V
CC
Core Voltage Supply: 1.8V
V
CC
Q I/O Voltage: 1.8V
• Package
54-ball VFBGA
54-ball VFBGA—Lead-free
• Timing
60ns access
70ns access
85ns access
Designator
MT45W4MW16B
MT45W4MW16BFB
Figure 1: 54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
Options
(continued)
• Frequency
66 MHz
80 MHz
104 MHz
• Standby power
Standard
Low-power
• Operating Temperature Range
Wireless (-30°C to +85°C)
Industrial (-40°C to +85°C)
Designator
6
8
1
1
None
L
WT
2
IT
1
FB
BB
1
-60
-70
-85
1
NOTE:
1. Contact factory.
2. -30°C exceeds the CellularRAM Workgroup 1.0
specification of -25°C.
Part Number Example:
MT45W4MW16BFB-708LWT
09005aef80be1fbd pdf/09005aef80be2036 zip
Burst CellularRAM_1.fm - Rev. E 11/04 EN
1
©2003 Micron Technology, Inc. All rights reserved.

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