IRF7706PBF datasheet, PDF - EEWORLD Datasheet

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IRF7706PBF: DescriptionPower Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8; CategoryDiscrete semiconductor The transistor; File Size155KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF7706PBF Overview

Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8

IRF7706PBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TSSOP
package instruction	LEAD FREE, TSSOP-8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	7 A
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	0.022 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-153AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	2
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.51 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

IRF7706PBF Preview

PD -94003

IRF7706

HEXFET

Power MOSFET

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

DSS

-30V

DS(on)

max

22mΩ@V

= -10V

36mΩ@V

= -4.5V

7.0A

-5.6A

Description

HEXFET

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 70°C

= 25°C

= 70°C

, T

STG

Drain-Source Voltage

Continuous Drain Current, V

@ -10V

Continuous Drain Current, V

@ -10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-30

-7.0

-5.7

-28

1.51

0.96

0.01

± 20

-55 to + 150

Units

W/°C

°C

Thermal Resistance

Parameter

θJA

Maximum Junction-to-Ambient

Max.

Units

°C/W

www.irf.com

10/04/00

IRF7706

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

(BR)DSS

∆V

(BR)DSS

/∆T

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

DS(on)

GS(th)

DSS

GSS

d(on)

d(off)

iss

oss

rss

Min.

-30

–––

-1.0

6.9

–––

Typ.

–––

0.015

–––

8.5

8.4

244

122

2211

339

207

Max. Units

Conditions

–––

= 0V, I

= -250µA

––– V/°C Reference to 25°C, I

= -1mA

= -10V, I

= -7.0A

mΩ

= -4.5V, I

= -5.6A

-2.5

= V

, I

= -250µA

–––

= -10V, I

= -7.0A

-15

= -24V, V

= 0V

µA

-25

= -24V, V

= 0V, T

= 70°C

-100

= -20V

100

= 20V

= -7.0A

–––

= -15V

–––

= -10V

= -15V, V

= -10V

= -1.0A

366

= 6.0Ω

183

= 15Ω

–––

= 0V

–––

= -25V

–––

ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max. Units

–––

-1.5

-28

-1.2

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

= 25°C, I

= -1.5A, V

= 0V

= 25°C, I

= -1.5A

di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

When mounted on 1 inch square copper board, t

10sec.

Pulse width

≤

300µs; duty cycle

≤

2%.

www.irf.com

IRF7706

100

VGS

TOP

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

100

VGS

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

TOP

-ID, Drain-to-Source Current (A)

-2.5V

20µs PULSE WIDTH

Tj = 25°C

0.1

100

20µs PULSE WIDTH

Tj = 150°C

0.1

100

-VDS, Drain-to-Source Voltage (V)

Fig 1.

Typical Output Characteristics

Fig 2.

Typical Output Characteristics

100

2.0

DS(on)

, Drain-to-Source On Resistance

(Normalized)

= -7.0A

-I

, Drain-to-Source Current (A)

1.5

= 150

1.0

= 25

0.5

0.1

2.0

V DS = -15V

20µs PULSE WIDTH

2.5

3.0

3.5

4.0

4.5

5.0

0.0

-60 -40 -20

= -10V

80 100 120 140 160

-V

, Gate-to-Source Voltage (V)

, Junction Temperature (

Fig 3.

Typical Transfer Characteristics

Fig 4.

Normalized On-Resistance

Vs. Temperature

www.irf.com

IRF7706

3200

2800

-V

, Gate-to-Source Voltage (V)

= 0V,

f = 1MHz

iss

= C

+ C

gd ,

SHORTED

rss

= C

oss

= C

+ C

-7.0A

=-24V

=-15V

C, Capacitance (pF)

2400

2000

1600

1200

800

iss

oss

400

100

rss

-V

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 5.

Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6.

Typical Gate Charge Vs.

Gate-to-Source Voltage

100

-I

, Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

= 150

-I

, Drain Current (A)

100us

1ms

= 25

0.1

0.2

= 0 V

0.5

0.8

1.1

1.4

0.1

= 25 °C

= 150 °C

Single Pulse

10ms

100

-V

,Source-to-Drain Voltage (V)

-V

, Drain-to-Source Voltage (V)

Fig 7.

Typical Source-Drain Diode

Forward Voltage

Fig 8.

Maximum Safe Operating Area

www.irf.com

IRF7706

8.0

7.0

-I

, Drain Current (A)

6.0

5.0

D.U.T.

4.0

3.0

Pulse Width

≤ 1

µs

Duty Factor

≤ 0.1 %

Fig 10a.

Switching Time Test Circuit

2.0

1.0

d(on)

d(off)

0.0

100

125

150

10%

, Case Temperature ( ° C)

Fig 9.

Maximum Drain Current Vs.

Case Temperature

90%

Fig 10b.

Switching Time Waveforms

100

D = 0.50

Thermal Response (Z

thJA

)

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t

/ t

2. Peak T

= P

x Z

thJA

+ T

0.001

0.01

0.1

100

1000

0.1

0.0001

, Rectangular Pulse Duration (sec)

Fig 11.

Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

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