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CWDM305NTR13

Description
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
CategoryDiscrete semiconductor    The transistor   
File Size2MB,2 Pages
ManufacturerCentral Semiconductor
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CWDM305NTR13 Overview

Power Field-Effect Transistor, 5.8A I(D), 30V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

CWDM305NTR13 Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)5.8 A
Maximum drain-source on-resistance0.034 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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