BC212B-C datasheet, PDF - EEWORLD Datasheet

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BC212B-C: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size67KB，1 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BC212B-C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

BC212B-C Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	140
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

BC212B-C Preview

BC212

Elektronische Bauelemente

-0.1A , -60V

PNP Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

General Purpose Switching and Amplification.

TO-92

CLASSIFICATION OF h

Product-Rank

Range

BC212

140~600

BC212B

140~400

BC212C

350~600

Base

Collector

REF.

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

3.30

3.81

0.36

0.56

Emitter

Base

Collector

REF.

Emitter

Millimeter

Min.

Max.

0.30

0.51

1.27 TYP.

1.10

1.40

2.42

2.66

0.36

0.76

ABSOLUTE MAXIMUM RATINGS

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction, Storage Temperature

Symbol

CBO

CEO

EBO

, T

STG

Ratings

-60

-50

-5

-0.1

350

357

150, -55~150

Unit

° /W

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

BC212

DC Current Gain

BC212B

BC212C

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Base to Emitter Voltage

Collector Output Capacitance

Transition Frequency

http://www.SeCoSGmbH.com/

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

CE(sat)

BE(sat)

Min.

-60

-50

-5

140

350

200

Typ.

Max.

-15

-0.1

-15

600

400

600

-0.6

-1.2

-0.72

Unit

µA

Test Conditions

= -0.01mA, I

= -2mA, I

= -0.01mA, I

= -30V, I

= -4V, I

= -5V, I

= -2mA

MHz

= -100mA, I

= -5mA

= -100mA, I

= -5mA

= -5V, I

= -2mA

= -10V, I

=0, f=1MHz

= -5V, I

= -10mA, f=100MHz

Any changes of specification will not be informed individually.

18-Dec-2012 Rev. A

Page 1 of 1

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BC212B-C Related Products

	BC212B-C	BC212C-C	BC212-C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Maker	SECOS	SECOS	SECOS
package instruction	HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	140	350	140
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz

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