BC212C-C datasheet, PDF - EEWORLD Datasheet

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BC212C-C: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size67KB，1 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BC212C-C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

BC212C-C Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	350
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

BC212C-C Preview

BC212

Elektronische Bauelemente

-0.1A , -60V

PNP Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

General Purpose Switching and Amplification.

TO-92

CLASSIFICATION OF h

FE

Product-Rank

Range

BC212

140~600

BC212B

140~400

BC212C

350~600

Base

2

3

Collector

REF.

A

B

C

D

E

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

1

Emitter

2

Base

3

Collector

REF.

F

G

H

J

K

1

Emitter

Millimeter

Min.

Max.

0.30

0.51

1.27 TYP.

1.10

1.40

2.42

2.66

0.36

0.76

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θ

JA

T

J

, T

STG

Ratings

-60

-50

-5

-0.1

350

357

150, -55~150

Unit

V

A

mW

° /W

C

°

C

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

BC212

DC Current Gain

BC212B

BC212C

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Base to Emitter Voltage

Collector Output Capacitance

Transition Frequency

http://www.SeCoSGmbH.com/

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE

C

ob

f

T

Min.

-60

-50

-5

-

140

350

-

200

Typ.

-

Max.

-

-15

-0.1

-15

600

400

600

-0.6

-1.2

-0.72

6

-

Unit

V

nA

µA

nA

Test Conditions

I

C

= -0.01mA, I

E

=0

I

C

= -2mA, I

B

=0

I

E

= -0.01mA, I

C

=0

V

CB

= -30V, I

E

=0

V

CE

= -30V, I

B

=0

V

EB

= -4V, I

C

=0

V

CE

= -5V, I

C

= -2mA

V

pF

MHz

I

C

= -100mA, I

B

= -5mA

I

C

= -100mA, I

B

= -5mA

V

CE

= -5V, I

C

= -2mA

V

CB

= -10V, I

C

=0, f=1MHz

V

CE

= -5V, I

C

= -10mA, f=100MHz

Any changes of specification will not be informed individually.

18-Dec-2012 Rev. A

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BC212C-C Related Products

	BC212C-C	BC212B-C	BC212-C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
Maker	SECOS	SECOS	SECOS
package instruction	CYLINDRICAL, O-PBCY-T3	HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	350	140	140
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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