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P4C116L-20DM

Description
Standard SRAM, 2KX8, 20ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
Categorystorage    storage   
File Size1MB,15 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
Download Datasheet Parametric View All

P4C116L-20DM Overview

Standard SRAM, 2KX8, 20ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24

P4C116L-20DM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerPyramid Semiconductor Corporation
Parts packaging codeDIP
package instruction0.300 INCH, CERAMIC, DIP-24
Contacts24
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time20 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T24
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.08 mm
Maximum standby current0.0006 A
Minimum standby current2 V
Maximum slew rate0.155 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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