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Datasheet> All Categories > Discrete semiconductor> The transistor> APT20M36SLL
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APT20M36SLL

Description
Power Field-Effect Transistor, 65A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size164KB，5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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APT20M36SLL Overview

Power Field-Effect Transistor, 65A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

APT20M36SLL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionD3PAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)65 A
Maximum drain current (ID)65 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)325 W
Maximum pulsed drain current (IDM)260 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

APT20M36SLL Preview

APT20M36BLL
APT20M36SLL
200V 65A 0.036
Ω
BLL
D
3
PAK
TO-247
POWER MOS 7
®
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
®
and Q
g
. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
SLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D
3
PAK Package
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT20M36BLL_SLL
UNIT
Volts
Amps
200
65
260
±30
±40
329
2.63
-55 to 150
300
65
30
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
200
0.036
100
500
±100
3
5
(V
GS
= 10V, I
D
= 32.5A)
Ohms
µA
nA
Volts
7-2004
050-7007 Rev C
Zero Gate Voltage Drain Current (V
DS
= 200V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 160V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT20M36BLL_SLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 100V
I
D
= 65A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 100V
I
D
= 65A @ 25°C
6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 133V, V
GS
= 15V
I
D
= 65A, R
G
= 5Ω
INDUCTIVE SWITCHING @ 125°C
V
DD
= 133V V
GS
= 15V
I
D
= 65A, R
G
= 5Ω
R
G
= 1.6Ω
MIN
TYP
MAX
UNIT
pF
3080
990
70
60
24
26
9
37
16
30
490
300
600
315
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
6
nC
ns
µ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
65
260
1.3
280
3.5
5
MIN
TYP
MAX
(Body Diode)
(V
GS
= 0V, I
S
= -65
A
)
Reverse Recovery Time (I
S
= -65
A
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -65
A
, dl
S
/dt = 100A/µs)
Peak Diode Recovery
dv
/
6
dt
V/ns
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
UNIT
°C/W
0.38
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
= +25°C, L = 0.62mH, R
G
= 25Ω, Peak I
L
= 65A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
65A
di
/
dt
≤
700A/µs
VR
≤
200V
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.40
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
-5
0.9
0.7
0.5
7-2004
Note:
PDM
t1
t2
0.3
050-7007 Rev C
0.1
0.05
10
-4
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
200
Junction
temp. (°C)
APT20M36BLL_SLL
VGS=15V
10V
I
D
, DRAIN CURRENT (AMPERES)
RC MODEL
160
0.0329
0.00334F
120
9V
Power
(watts)
0.158
0.00802F
80
8V
7.5V
0.189
Case temperature. (°C)
0.165F
40
7V
6.5V
6V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
V
NORMALIZED TO
= 10V @ I = 32.5A
D
0
140
I
D
, DRAIN CURRENT (AMPERES)
120
100
80
60
40
20
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
GS
1.3
1.2
1.1
1.0
0.9
0.8
VGS=10V
TJ = +25°C
TJ = +125°C
TJ = -55°C
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V
0
20
40
60
80
100
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
70
60
50
40
30
20
10
0
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
I
D
, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
0.90
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
2.5
I
D
1.2
= 32.5A
= 10V
V
GS
2.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.1
1.0
0.9
0.8
0.7
0.6
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-7007 Rev C
7-2004
260
100
OPERATION HERE
LIMITED BY RDS (ON)
10,000
5,000
APT20M36BLL_SLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
50
100µS
1,000
500
Coss
10
1mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
5
10
50 100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
100
50
Crss
10mS
1
1
16
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
14
12
10
8
6
4
2
50
100
150
200
250
300
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
45
40
35
t
d(off)
0
0
VDS=40V
VDS=100V
VDS=160V
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
I
= 65A
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
0
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V
DD
G
= 133V
R
= 5Ω
100
80
t
r
and t
f
(ns)
T = 125°C
J
L = 100µH
V
DD
G
t
d(on)
and t
d(off)
(ns)
30
25
20
15
10
5
0
30
= 133V
R
= 5Ω
T = 125°C
J
L = 100µH
60
40
20
0
30
t
f
t
r
t
d(on)
60
70
80
90
100
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
40
50
60
70
80
90
100
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
40
50
1200
= 133V
R
= 5Ω
1000
SWITCHING ENERGY (µJ)
T = 125°C
L = 100µH
SWITCHING ENERGY (µJ)
J
800
E
on
600
E
off
400
V
I
DD
800
600
400
200
0
30
E
ON
includes
diode reverse recovery.
E
on
= 133V
7-2004
D
J
= 65A
E
off
200
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7007 Rev C
60
70
80
90
100
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
40
50
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90%
10%
Gate Voltage
T
J
125°C
APT20M36BLL_SLL
Gate Voltage
t
d(on)
t
r
Drain Current
5%
10%
Switching Energy
90%
5%
Drain Voltage
t
d(off)
90%
T
J
125°C
t
f
10%
0
Drain Voltage
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V
DD
I
D
V
DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
Gate
Drain
Source
5.45 (.215) BSC
{2 Plcs.}
Heat Sink (Drain)
and Leads
are Plated
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7007 Rev C
7-2004
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
3.81 (.150)
4.06 (.160)
(Base of Lead)
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

APT20M36SLL Related Products

APT20M36SLL APT20M36BLL
Description Power Field-Effect Transistor, 65A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Power Field-Effect Transistor, 65A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Microsemi Microsemi
package instruction D3PAK-3 TO-247, 3 PIN
Contacts 3 3
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 1300 mJ 1300 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (Abs) (ID) 65 A 65 A
Maximum drain current (ID) 65 A 65 A
Maximum drain-source on-resistance 0.036 Ω 0.036 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSFM-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 325 W 325 W
Maximum pulsed drain current (IDM) 260 A 260 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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