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WSE128K16-42H1C

Description
Memory Circuit,
Categorystorage    storage   
File Size1MB,16 Pages
ManufacturerMercury Systems Inc
Download Datasheet Parametric View All

WSE128K16-42H1C Overview

Memory Circuit,

WSE128K16-42H1C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMercury Systems Inc
package instructionHIP-66
Reach Compliance Codeunknown
JESD-30 codeS-CPGA-P66
length27.3 mm
memory density2097152 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals66
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX16
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codePGA
Package shapeSQUARE
Package formGRID ARRAY
Maximum seat height4.34 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationPERPENDICULAR
width27.3 mm
128Kx16 SRAM/EEPROM MODULE
WSE128K16-XXX
FEATURES

Access Times of 35ns (SRAM) and 150ns (EEPROM)

Access Times of 45ns (SRAM) and 120ns (EEPROM)

Packaging
• 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic
HIP (H1) (Package 400)
• 68 lead, Hermetic CQFP (G2T), 22mm (0.880") square
(Package 509). Designed to
t JEDEC 68 lead 0.990"
CQFJ footprint (FIGURE 2)

128Kx16 SRAM

128Kx16 EEPROM

Organized as 128Kx16 of SRAM and 128Kx16 of EEPROM
Memory with separate Data Buses

Both blocks of memory are User Configurable as 256Kx8

Low Power CMOS

Commercial, Industrial and Military Temperature Ranges

TTL Compatible Inputs and Outputs

Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation

Weight - 13 grams typical
EEPROM MEMORY FEATURES

Write Endurance 10,000 Cycles

Data Retention at 25°C, 10 Years

Low Power CMOS Operation

Automatic Page Write Operation

Page Write Cycle Time 10ms Max.

Data Polling for End of Write Detection

Hardware and Software Data Protection

TTL Compatible Inputs and Outputs
* This product is under development, is not qualified or characterized and is subject to change
without notice.
FIGURE 1 – WSE128K16-XH1X PIN CONFIGURATION
ED
0-15
PIN DESCRIPTION
EEPROM Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
EEPROM Write Enable
EEPROM Chip Select
SD
0-15
A
0-16
SWE#
1-2
SCS#
1-2
OE#
V
CC
GND
NC
EWE#
1-2
ECS#
1-2
TOP VIEW
1
SD
8
SD
9
SD
10
A
13
A
14
A
15
A
16
NC
SD
0
SD
1
SD
2
11
22
12
SWE
2
#
SCS
2
#
GND
SD
11
A
10
A
11
A
12
V
CC
SCS
1
#
NC
SD
3
33
23
SD
15
SD
14
SD
13
SD
12
OE#
NC
SWE#
1
SD
7
SD
6
SD
5
SD
4
ED
8
ED
9
ED
10
A
6
A
7
NC
A
8
A
9
ED
0
ED
1
ED
2
44
34
V
CC
ECS
2
#
EWE
2
#
ED
11
A
3
A
4
A
5
EWE
1
#
ECS
1
#
GND
ED
3
55
45
ED
15
ED
14
ED
13
ED
12
A
0
A
1
A
2
ED
7
ED
6
ED
5
ED
5
66
56
BLOCK DIAGRAM
SWE
1
# SCS
1
#
OE#
A
0-16
128K x 8
SRAM
128K x 8
SRAM
128K x 8
EEPROM
128K x 8
EEPROM
SWE
2
# SCS
2
#
EWE
1
# ECS
1
#
EWE
2
# ECS
2
#
8
8
8
8
SD
0 - 7
SD
8 - 1 5
ED
0 - 7
ED
8 - 1 5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
1
4370.07E-0816-ss-WSE128K16-XXX
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