BAS40-05B5000 datasheet, PDF - EEWORLD Datasheet

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BAS40-05B5000: Description0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN; CategoryDiscrete semiconductor diode; File Size901KB，9 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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BAS40-05B5000 Overview

0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN

BAS40-05B5000 Parametric

Parameter Name	Attribute value
Maker	Rochester Electronics
Parts packaging code	SOT-23
package instruction	R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	2
Number of terminals	3
Maximum output current	0.12 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.25 W
Certification status	COMMERCIAL
Maximum repetitive peak reverse voltage	40 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL

BAS40-05B5000 Preview

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BAS40...B5000 / B5003

Silicon Schottky Diode

•

General-purpose diode for high-speed switchhing

•

Circuit protected

•

Voltage clamping

•

High-level detecting and mixing

•

Improved operating temperature range

due to extra-low thermal resistance

(see attached Forward current curves)

•

High volume packing size:

B5000: 9 x 10k reels, B5003: 10 x 3k reels

•

Not for automotive applications*

BAS40

BAS40-04

BAS40-05

BAS40-06

D 1

D 2

D 1

D 2

D 1

D 2

Type

BAS40

BAS40-04

BAS40-05

BAS40-06

Package

SOT23

Configuration

single

series

common cathode

common anode

(nH)

1.8

Marking

43s

44s

45s

46s

* Automotive qualification ongoing

2006-08-04

BAS40...B5000 / B5003

Maximum Ratings

= 25°C, unless otherwise specified

Parameter

Diode reverse voltage

Forward current

Non-repetitive peak surge forward current

≤ 10 µσ)

Total power dissipation

BAS40, T

≤ 118 °C

BAS40-04, BAS40-06, T

≤ 110°

BAS40-05, T

≤ 104°C

Junction temperature

Operating temperature range

Storage temperature

stg

tot

250

150

-55 ... 125

-55 ... 150

°C

Symbol

FSM

Value

120

200

Unit

Thermal Resistance

Parameter

Junction - soldering point

BAS40

BAS40-04, BAS40-06

BAS40-05

For

Symbol

thJS

Value

≤

130

≤

160

≤

185

Unit

K/W

calculation of

thJA

please refer to Application Note Thermal Resistance

2006-08-04

BAS40...B5000 / B5003

Electrical Characteristics

= 25°C, unless otherwise specified

Parameter

DC Characteristics

Breakdown voltage

(BR)

= 10 µA

(BR)

Symbol

min.

Values

typ.

max.

Unit

µA

Reverse current

= 30 V

Forward voltage

= 1 mA

= 10 mA

= 40 mA

250

350

600

∆

310

450

720

380

500

1000

Forward voltage matching

= 10 mA

AC Characteristics

Diode capacitance

= 0 ,

= 1 MHz

Differential forward resistance

= 10 mA,

= 10 kHz

Charge carrier life time

= 25 mA

∆V

100

Ω

is the difference between lowest and highest

in a multiple diode component.

2006-08-04

BAS40...B5000 / B5003

Diode capacitance

)

= 1MHz

BAS 40...

EHB00040

Forward resistance

)

= 1MHz

Ω

BAS 40...

EHB00041

0.1

mA 100

Reverse current

)

= Parameter

-4

Reverse current

ƒ(V

)

= Parameter

BAS 40...

EHB00039

= 150 C

-5

-6

85 C

-7

VR = 40V

30V

20V

10V

-1

25 C

-8

100

°C

150

-2

2006-08-04

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BAS40-05B5000 Related Products

	BAS40-05B5000	BAS40B5000	BAS40B5003	BAS40-04B5003	BAS40-04B5000	BAS40-06B5000	BAS40E6327
Description	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN	0.12 A, 40 V, SILICON, SIGNAL DIODE, SOT-23, 3-PIN	0.12 A, 40 V, SILICON, SIGNAL DIODE, SOT-23, 3-PIN	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN	0.12 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3-PIN	0.12 A, 40 V, SILICON, SIGNAL DIODE, SOT-23, 3-PIN
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	COMMON CATHODE, 2 ELEMENTS	SINGLE	SINGLE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	2	1	1	2	2	2	1
Number of terminals	3	3	3	3	3	3	3
Maximum output current	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Maximum repetitive peak reverse voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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