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BAS40...B5000 / B5003
Silicon Schottky Diode
•
General-purpose diode for high-speed switchhing
•
Circuit protected
•
Voltage clamping
•
High-level detecting and mixing
•
Improved operating temperature range
due to extra-low thermal resistance
(see attached Forward current curves)
•
High volume packing size:
B5000: 9 x 10k reels, B5003: 10 x 3k reels
•
Not for automotive applications*
BAS40
3
BAS40-04
3
BAS40-05
3
BAS40-06
3
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
2
1
2
1
2
Type
BAS40
BAS40-04
BAS40-05
BAS40-06
Package
SOT23
SOT23
SOT23
SOT23
Configuration
single
series
common cathode
common anode
L
S
(nH)
1.8
1.8
1.8
1.8
Marking
43s
44s
45s
46s
* Automotive qualification ongoing
1
2006-08-04
BAS40...B5000 / B5003
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
(t
≤ 10 µσ)
Total power dissipation
BAS40, T
s
≤ 118 °C
BAS40-04, BAS40-06, T
s
≤ 110°
C
BAS40-05, T
s
≤ 104°C
Junction temperature
Operating temperature range
Storage temperature
T
j
T
op
T
stg
P
tot
250
250
250
150
-55 ... 125
-55 ... 150
°C
mW
Symbol
V
R
I
F
I
FSM
Value
40
120
200
Unit
V
mA
Thermal Resistance
Parameter
Junction - soldering point
1)
BAS40
BAS40-04, BAS40-06
BAS40-05
1
For
Symbol
R
thJS
Value
≤
130
≤
160
≤
185
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2006-08-04
BAS40...B5000 / B5003
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
V
(BR)
I
R
V
F
Symbol
min.
40
-
Values
typ.
-
-
max.
-
1
Unit
V
µA
mV
Reverse current
V
R
= 30 V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
250
350
600
∆
V
F
310
450
720
-
380
500
1000
20
Forward voltage matching
1)
I
F
= 10 mA
-
AC Characteristics
Diode capacitance
V
R
= 0 ,
f
= 1 MHz
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
Charge carrier life time
I
F
= 25 mA
1
∆V
C
T
R
F
τ
rr
-
-
-
3
10
-
5
-
100
pF
Ω
ps
F
is the difference between lowest and highest
V
F
in a multiple diode component.
3
2006-08-04
BAS40...B5000 / B5003
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
BAS 40...
EHB00040
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 1MHz
10
3
r
f
Ω
BAS 40...
EHB00041
5
C
T
pF
4
10
2
3
2
10
1
1
0
0
10
20
V
V
R
30
10
3
0.1
1
10
mA 100
Ι
F
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
-4
A
Reverse current
I
R
=
ƒ(V
R
)
T
A
= Parameter
BAS 40...
EHB00039
10
3
Ι
R
µ
A
10
2
T
A
= 150 C
10
-5
I
R
10
1
10
-6
85 C
10
0
10
-7
VR = 40V
30V
20V
10V
10
-1
25 C
10
-8
0
25
50
75
100
°C
150
10
-2
0
10
20
30
V
V
R
40
T
A
4
2006-08-04