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MJW16010

Description
SWITCHMODE Series NPN Silicon Power Transistors
CategoryDiscrete semiconductor    The transistor   
File Size1MB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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MJW16010 Overview

SWITCHMODE Series NPN Silicon Power Transistors

MJW16010 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Maximum collector current (IC)15 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ16010
Designer's™ Data Sheet
MJW16010
MJ16012*
MJW16012
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high-voltage, high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line-operated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn-Off Times — TC = 100°C
50 ns Inductive Fall Time (Typ)
90 ns Inductive Crossover Time (Typ)
800 ns Inductive Storage Time (Typ)
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
-Peak(1)
Base Current — Continuous
-Peak(1)
Total Device Dissipation
@T
C
= 25°C
@Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
MJ 16010
MJ16012
MJW16010
MJW16012
450
850
6.0
15
20
10
15
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCEV
VEB
'CM
IG
(TO-3)
MJ16010
MJ16012
IB
IBM
PD
1 75
100
1.0
T
J.
T
stg
Watts
135
538
1.11
-55 to 150
W/°C
°C
-65 to 200
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Lead Temperature for Soldering
Purposes, 1/8" from Case for
5 Seconds
Symbol
Max
1.0
275
0.93
Unit
°C/W
RSJC
T
L
°c
TO-247AE
MJW16010
MJW16012
(1) Pulse Test: Pulse Width s 50 us, Duty Cycle > 10%
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished
by
NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

MJW16010 Related Products

MJW16010 MJ16010 MJW16012 MJ16012
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Reach Compliance Code unknow unknow unknow unknow

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