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FR1007GA

Description
Rectifier Diode, 10A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size104KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FR1007GA Overview

Rectifier Diode, 10A, 1000V V(RRM),

FR1007GA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationFAST RECOVERY
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

FR1007GA Preview

FR1001G
THRU
FR1007G
10 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
10 Amperes
Features
a
a
a
a
a
a
a
a
a
a
TO-220
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: ITO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-
Terminals:
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
250°C/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Dimensions in inches and (millimeters)
a
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FR
FR
FR
FR
FR
FR
FR
Units
Type Number
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ T
C
=25°C
at Rated DC Blocking Voltage @ T
C
=125°C
Maximum Reverse Recovery Time ( Note 1)
Typical Thermal Resistance RÛJC (Note 2)
Operating and Storage Temperature Range T
J
,T
STG
50
35
50
100
70
100
200
140
200
400
280
400
10
125
1.3
5.
0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
nS
°C/W
°C
150
250
3.0
-65 to +150
500
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
- 272 -
RATINGS AND CHARACTERISTIC CURVES (FR1001G THRU FR1007G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
DUT
(-)
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
(+)
50Vdc
(approx)
(-)
1W
NON
INDUCTIVE
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
AVERAGE FORWARD CURRENT. (A)
12.0
10.0
8.0
6.0
4.0
0.2
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER LEG
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
100
Tj=125
0
C
10
0
50
LEAD TEMPERATURE. ( C)
o
100
150
PEAK FORWARD SURGE CURRENT. (A)
150
125
100
75
50
25
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
1.0
Tj=25
0
C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
80
1
2
5
10
20
50
100
INSTANTANEOUS FORWARD CURRENT. (A)
40
20
10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG
300
250
200
150
100
50
0.1
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0.5
1.0
5
10
50
100
500
1000
0
4
2
1.0
CAPACITANCE.(pF)
.4
.2
.1
.8
.9
1.0
1.1
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
1.2
1.3
1.4
1.5
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
- 273-

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