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RM11B

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size19KB,1 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric View All

RM11B Overview

Rectifier Diode

RM11B Parametric

Parameter NameAttribute value
MakerShandong Yiguang Electronic Joint Stock Co., Ltd.
Reach Compliance Codeunknown

RM11B Preview

SILICON RECTIFIERS
RM11 THRU RM11C
1.Dimensions of outlines
Unit: mm
YIGUANG
DO-15
2.Maximum Ratings
TYPE NUMBER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current
9.5mm lead length at T
A
=70
Peak Forward Surge Current,8.3ms single
half-wave superimposed on rated
load(JEDEC method)
Operating junction temperature range
Storage temperature range
3. Electronical Characteristics (Ta=25
Symbols Units
V
RRM
V
RMS
V
DC
I
F(AV)
V
V
V
A
RM11
400
280
400
RM11A
600
420
600
1.2
RM11B
800
560
800
RM11C
1000
700
1000
I
FSM
T
J
T
stg
A
50.0
-65to+175
-65to+175
unless otherwise specified)
TYPE NUMBER
Maximum instantaneous forward voltage at1.5A
Symbols
V
F
Ta=25
Ta=100
I
R1
I
R2
Units
V
A
A
Value
0.92Ma.
10Max.
50.0Max
Maximum instantaneous reverse current at rated DC
blocking voltage
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