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SMPJ310

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236
CategoryDiscrete semiconductor    The transistor   
File Size146KB,11 Pages
ManufacturerInterFET
Websitehttp://www.interfet.com/
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236

SMPJ310 Parametric

Parameter NameAttribute value
MakerInterFET
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)3.5 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
01/99
E-1
Semiconductor Databook
Section E
Small Outline
(Surface Mount)
Package Devices
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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