EDI88512LPA35B32M datasheet, PDF

EDI88512LPA35B32M: DescriptionStandard SRAM, 512KX8, 35ns, CMOS, CDSO32,; Categorystorage storage; File Size208KB，8 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI88512LPA35B32M Overview

Standard SRAM, 512KX8, 35ns, CMOS, CDSO32,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	35 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-CDSO-G32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	SOP
Encapsulate equivalent code	SOP32,.56
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Minimum standby current	2 V
Maximum slew rate	0.225 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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