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Datasheet> All Categories > Discrete semiconductor> The transistor> KST5089S62Z
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KST5089S62Z

Description
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size61KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KST5089S62Z Overview

Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon

KST5089S62Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

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Download Datasheet
KST5088/5089
KST5088/5089
Low Noise Transistor
3
2
1
SOT-23
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KST5088
: KST5089
V
CEO
Collector-Emitter Voltage
: KST5088
: KST5089
V
EBO
I
C
P
C
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
1. Base 2. Emitter 3. Collector
Value
35
30
30
25
4.5
50
350
150
Units
V
V
V
V
V
mA
mW
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KST5088
: KST5089
Collector-Emitter Breakdown Voltage
: KST5088
: KST5089
Collector Cut-off Current
: KST5088
: KST5089
Emitter Cut-off Current
DC Current Gain
: KST5088
: KST5089
: KST5088
: KST5089
: KST5088
: KST5089
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
: KST5088
: KST5089
I
C
=100µA, V
CE
=5V
R
S
=10KΩ, f=10Hz to 15.7KHz
3
2
dB
dB
V
CE
=5V, I
C
=100µA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=5V, I
C
=500µA, f=20MHz
V
CB
=5V, I
E
=0, f=100KHz
50
4
300
400
350
450
300
400
900
1,200
Test Condition
I
C
=100µA, I
E
=0
Min.
35
30
I
C
=1mA, I
B
=0
30
25
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
V
EB
=3V, I
C
=0
50
50
50
V
V
nA
nA
nA
Max.
Units
V
V
BV
CEO
I
CBO
I
EBO
h
FE
0.5
0.8
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001

KST5089S62Z Related Products

KST5089S62Z KST5088D87Z KST5088L99Z KST5088S62Z KST5089D87Z KST5089L99Z
Description Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
Maker Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 25 V 30 V 30 V 30 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 400 300 300 300 400 400
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz 50 MHz

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