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MB4S

Description
0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size99KB,2 Pages
ManufacturerMAKO
Websitehttp://www.makosemi.hk
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0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

MB4S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current0.8000 A
Processing package descriptionPlastic, MB-S, 4 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current30 A

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MB4S MB05S MB1S MB6S MB8S MB10S MB2S
Description 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE MULTICOMP - MB6S - BRIDGE RECTIFIER; Single PHASE; 800mA; 600V; MBS; FULL REEL 0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
state TRANSFERRED Active ACTIVE - DISCONTINUED ACTIVE ACTIVE
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