SMD Type
NPN Transistors
2SC2714-HF
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
●
Collector Current Capability I
C
=20mA
●
Collector Emitter Voltage V
CEO
=30V
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
■
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
40
30
4
20
100
1000
125
-55 to 125
mA
mW
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise Figure
Reverse Transfer capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
NF
C
re
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100μA， I
C
= 0
V
CB
= 18 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=100 mA, I
B
=10mA
I
C
=100 mA, I
B
=10mA
V
CE
= 6V, I
C
= 1mA
V
CE
= 6V, I
E
= -1mA,f=100MHz
V
CB
= 6V, I
E
= 0,f=1MHz
V
CE
= 6V, I
C
= 1mA
40
2.5
0.7
550
Min
40
30
4
0.5
0.5
0.4
1.2
200
5
dB
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SC2714-R-HF
40-80
QR
F
2SC2714-O-HF
70-140
QO
F
2SC2714-Y-HF
100-200
QY
F
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1
SMD Type
NPN Transistors
2SC2714-HF
■
Typical Characterisitics
7
Transistors
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
1000
h
FE
——
I
C
COLLECTOR CURRENT I
C
(mA)
6
40uA
36uA
32uA
5
DC CURRENT GAIN h
FE
T
a
=100
℃
4
28uA
24uA
100
T
a
=25
℃
3
20uA
16uA
12uA
8uA
I
B
=4uA
2
1
V
CE
=6V
10
0
0
1
2
3
4
5
6
7
8
1
10
20
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1.0
V
BEsat
—— I
C
β=10
0.3
V
CEsat
——
I
C
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
0.1
T
a
=100
℃
T
a
=25
℃
0.6
T
a
=100
℃
0.4
0.1
1
10
20
0.01
1
10
20
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
I
C
(mA)
10
——
V
BE
V
CE
=6V
10
C
ob
/ C
ib
C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
℃
COLLECTOR CURRENT
CAPACITANCE C (pF)
T
a
=100
℃
C
ob
1
1
T
a
=25
℃
0.1
0.2
0.4
0.6
0.8
1.0
0.1
0.1
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
0.3
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
0.2
0.1
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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