HAT1089C_15 datasheet, PDF - EEWORLD Datasheet

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HAT1089C_15: DescriptionSilicon P Channel MOS FET Power Switching; File Size97KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HAT1089C_15 Overview

Silicon P Channel MOS FET Power Switching

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Data Sheet

HAT1089C

Silicon P Channel MOS FET

Power Switching

Features

•

Low on-resistance

DS(on)

= 79 m

typ (at V

= –4.5 V)

•

Low drive current.

•

2.5 V gate drive devices.

•

High density mounting

R07DS1170EJ0400

(Previous: REJ03G1227-0300)

Rev.4.00

Mar 19, 2014

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK-6)

Indexband

2 3 4 5

DDD D

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Symbol

DSS

GSS

D(pulse)

Pch

Note2

Tch

Tstg

Note1

Ratings

–20

±12

–2

–8

–2

850

150

–55 to +150

Unit

°C

Notes 1. PW

≤

μs,

duty cycle

≤

2. When using the glass epoxy board. (FR4 40

1.6mm), Ta = 25°C

R07DS1170EJ0400 Rev.4.00

Mar 19, 2014

Page 1 of 6

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