AH22S_15 datasheet, PDF - EEWORLD Datasheet

AH22S_15: Description50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER; CategoryTopical application Wireless rf/communication; File Size158KB，4 Pages; ManufacturerTriQuint Semiconductor Inc. (Qorvo); Websitehttp://www.triquint.com

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AH22S_15 Overview

50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

Parameter Name	Attribute value
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum input power	13 dBm
Maximum operating frequency	1000 MHz
Minimum operating frequency	50 MHz
Processing package description	Green, plastic, MS-012, SOIC-8
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
structure	COMPONENT
terminal coating	Nickel Palladium
Impedance characteristics	50 ohm
Microwave RF Type	WIDE band MEDIUM POWER

	AH22S_15	AH22S-G	AH22S-PCB
Description	50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER	50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Maximum operating temperature	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel
Maximum input power	13 dBm	13 dBm	13 dBm
Maximum operating frequency	1000 MHz	1000 MHz	1000 MHz
Minimum operating frequency	50 MHz	50 MHz	50 MHz
Processing package description	Green, plastic, MS-012, SOIC-8	Green, plastic, MS-012, SOIC-8	Green, plastic, MS-012, SOIC-8
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
structure	COMPONENT	COMPONENT	COMPONENT
terminal coating	Nickel Palladium	Nickel Palladium	Nickel Palladium
Impedance characteristics	50 ohm	50 ohm	50 ohm
Microwave RF Type	WIDE band MEDIUM POWER	WIDE band MEDIUM POWER	WIDE band MEDIUM POWER

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